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GTRB424908FC/1-V1

H-37248KC-6-2 package type with Wolfspeed logo
High Power RF GaN on SiC HEMT 450 W, 48 V, 3700 – 3980 MHz

The GTRB424908FC/1 is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.

GTRB424908FC/1-V1

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Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRB424908FC/1-V1
Yes
GaN on SiC
3.7 GHz
3.98 GHz
450 W
12 dB
42%
48 V
Earless
Features
  • GaN on SiC HEMT technology
  • Typical Pulsed CW performance, 3800 MHz, 48 V, 100 μs, pulse width, 10% duty cycle, combined outputs
    • Output power at P3dB = 450 W
    • Efficiency at P3dB = 61%
  • Human Body Model Class 1C (per ANSI/ESDA/JEDECJS-001)
  • Pb-free and RoHS compliant
Applications
  • Telecom

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