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GTRB424908FC/1 V1

GTRB424908FC/1-V1

h-37248kc-6-2
High Power RF GaN on SiC HEMT 450 W, 48 V, 3700 – 4000 MHz

The GTRB424908FC/1 is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.

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Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRB424908FC/1-V1
Yes
GaN on SiC
3.7 GHz
4 GHz
450 W
12 dB
42%
48 V
Surface Mount
Product SKU
Buy Online
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRB424908FC/1-V1
Yes
GaN on SiC
3.7 GHz
4 GHz
450 W
12 dB
42%
48 V
Surface Mount
Features
  • GaN on SiC HEMT technology
  • Typical Pulsed CW performance, 3800 MHz, 48 V, 100 μs, pulse width, 10% duty cycle, combined outputs
    • Output power at P3dB = 450 W
    • Efficiency at P3dB = 61%
  • Human Body Model Class 1C (per ANSI/ESDA/JEDECJS-001)
  • Pb-free and RoHS compliant
Applications
  • Telecom
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