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GTVA101K4

High Power RF GaN on SiC HEMT 1400 W; 50 V; 0.96 - 1.4 GHz
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The GTVA101K4 is a GaN on SiC high electron mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities. This makes the GTVA101K4 ideal for applications in the 0.96 – 1.4 GHz frequency band. The transistor could be utilized for band-specific applications ranging from UHF through 1.4 GHz.

GTVA101K4

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
GTVA101K42EV-V1
Yes
GaN on SiC
0.96 GHz
1.4 GHz
1400 W
17 dB
68%
50 V
Packaged Discrete Transistor
Bolt Down
LTN/GTVA101K42EV-V1
Yes
GaN on SiC
0.96 GHz
1.4 GHz
1400 W
17 dB
68%
50 V
Packaged Discrete Transistor
Bolt Down
Features
  • Input matched
  • Typical Pulsed CW performance; 960 – 1215 MHz; 50 V; single side; 128 μs pulse width; 10% duty cycle; Output power at P3dB = 1400 W; Efficiency = 68%; Gain = 17 dB
  • Pb-free and RoHS compliant
Applications
  • Radar Amplifiers

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