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Peak Output Power 1400W
Application Radar
Power Gain 17 dB
Operating Voltage 50 V
Frequency 0.96 - 1.215 GHz
Package Type Bolt Down
Efficiency 68%
Technology GaN on SiC

High Power RF GaN on SiC HEMT 1400 W, 50 V, 0.96 - 1.215 GHz


The GTVA101K42EV is a GaN on SiC high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities. This makes the GTVA101K42EV ideal for applications in the 0.96 – 1.215 GHz frequency band. The transistor could be utilized for band-specific applications ranging from UHF through 1.4 GHz.


  • GaN on SiC HEMT technology
  • Input matched
  • Typical Pulsed CW performance, 960 – 1215 MHz, 50 V, single side, 128 μs pulse width, 10% duty cycle
    • Output power at P3dB = 1400 W
    • Efficiency = 68%
    • Gain = 17 dB
  • Pb-free and RoHS compliant



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