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Peak Output Power 1400W (P3dB)
Application Avionics
Power Gain 17 dB
Operating Voltage 50 V
Frequency 0.96 - 1.215 GHz
Package Type Bolt Down
Efficiency 68%
Technology GaN

High Power RF GaN on SiC HEMT 1400 W, 50 V, 960 – 1215 MHz

SKU: GTVA101K42EV-V1


The GTVA101K42EV is a 1400-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with bolt-down flange.

Features

  • GaN on SiC HEMT technology
  • Input matched
  • Typical Pulsed CW performance, 960 – 1215 MHz, 50 V, single side, 128 μs pulse width, 10% duty cycle
    • Output power at P3dB = 1400 W
    • Efficiency = 68%
    • Gain = 17 dB
  • Pb-free and RoHS compliant

Documents