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Peak Output Power 400W (P3dB)
Application Avionics
Power Gain 19 dB
Operating Voltage 50 V
Frequency 0.96 - 1.215 GHz
Package Type Earless
Efficiency 70%
Technology GaN

High Power RF GaN on SiC HEMT 400 W, 50 V, 960 – 1215 MHz

SKU: GTVA104001FA-V1


The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequecy band. It features input matching, high efficiency, and a thermally-enhanced surface mount package with earless flange.

Features

  • GaN on SiC HEMT technology
  • Broadband internal input matching
  • Typical Pulsed CW performance, 960 - 1215 MHz, 50V
    • Output power = 410 W
    • Drain Efficiency = 70 %
    • Gain = 19 dB
    • Pulse width = 128 μs
    • Duty cycle = 10 %
  • Pb-free and RoHS compliant

Documents