Features
- GaN on SiC HEMT technology
- Broadband internal input matching
- Typical Pulsed CW performance; 960 – 1215 MHz; 50V
- Output power = 410 W
- Drain Efficiency = 70 %
- Gain = 19 dB
- Pulse width = 128 μs
- Duty cycle = 10 %
- Pb-free and RoHS compliant
GTVA104001FA V1
GTVA104001FA-V1
High Power RF GaN on SiC HEMT 400 W; 50 V; 960 – 1215 MHz
The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequecy band. It features input matching; high efficiency; and a thermally-enhanced surface mount package with earless flange.
Applications
- L-Band Radar Amplifiers
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- Tools & Support
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Improving Pulse Fidelity in RF Power Amplifiers
A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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Technical ArticlesRecommendations for Improving Pulse Fidelity in RF Power Amplifiers
Join Scott Blum, RF Applications Engineer with Wolfspeed as he discusses how to design areas of a pulsed amplifier circuit to achieve a high degree of pulse fidelity.
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WebinarsGaN on SiC Range and Thermal Awareness Eases X-Band Radar Design
As the need for smaller and higher performing radar systems is increasing, GaN on SiC has become the technology of choice for next generation radar systems. This article will discuss GaN on SiC MMIC solutions to thermal concerns for next generation radar systems during continuous wave (CW) operation.
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