Features
- GaN on SiC HEMT technology
- Broadband internal input matching
- Typical Pulsed CW performance; 960 – 1215 MHz; 50V
- Output power = 410 W
- Drain Efficiency = 70 %
- Gain = 19 dB
- Pulse width = 128 μs
- Duty cycle = 10 %
- Pb-free and RoHS compliant
GTVA104001FA V1
GTVA104001FA-V1
High Power RF GaN on SiC HEMT 400 W; 50 V; 960 – 1215 MHz
The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequecy band. It features input matching; high efficiency; and a thermally-enhanced surface mount package with earless flange.
Product SKU | Buy Online | Request Sample | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GTVA104001FA-V1 | Yes | GaN on SiC | 0.96 GHz | 1.215 GHz | 400 W | 19 dB | 70% | 50 V | Packaged Discrete Transistor | Earless |
Product SKU | Buy Online | Request Sample | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GTVA104001FA-V1 | Yes | GaN on SiC | 0.96 GHz | 1.215 GHz | 400 W | 19 dB | 70% | 50 V | Packaged Discrete Transistor | Earless |
Applications
- L-Band Radar Amplifiers
- Documentation
- Evaluation Tools & Support
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Knowledge Center
GaN on SiC
Thermal Considerations for X-Band MMICs Under CW Operation
Join Kasyap Patel of Wolfspeed for a live webinar on September 20th as we discuss GaN on SiC MMIC solutions to thermal concerns for next generation radar systems during continuous wave (CW) operation.
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Webinars
GaN on SiC
RF Power Amplification 101: Amplifier Classes
The purpose of the RF PA is to increase the power of the RF input signal. This is achieved by applying the signal to the gate. This article compares some of the common amplifier classes, starting with the most-linear but least-efficient Class A to the still-linear (due to the ideal transistor) but more-efficient Class F and inverse-F.
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Technical Articles
GaN on SiC
Countering RCIEDs with GaN’s Bandwidth & Power Density Advantages
Counter-RCIED devices used by the military and law enforcement rely on jamming wireless trigger signals. This article will discuss how GaN’s high-temperature reliability and power density capability enables jammer equipment to meet system SWaP-C requirements.
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