Features
- GaN on SiC HEMT technology
- Broadband internal input matching
- Typical Pulsed CW performance; 960 – 1215 MHz; 50V
- Output power = 410 W
- Drain Efficiency = 70 %
- Gain = 19 dB
- Pulse width = 128 μs
- Duty cycle = 10 %
- Pb-free and RoHS compliant
GTVA104001FA-V1
High Power RF GaN on SiC HEMT 400 W; 50 V; 960 – 1215 MHz
The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequecy band. It features input matching; high efficiency; and a thermally-enhanced surface mount package with earless flange.
GTVA104001FA-V1
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GTVA104001FA-V1 | Yes | GaN on SiC | 0.96 GHz | 1.215 GHz | 400 W | 19 dB | 70% | 50 V | Packaged Discrete Transistor | Earless |
Applications
- L-Band Radar Amplifiers
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