Features
- GaN on SiC HEMT technology
- Broadband internal input matching
- Typical Pulsed CW performance; 960 – 1215 MHz; 50V
- Output power = 410 W
- Drain Efficiency = 70 %
- Gain = 19 dB
- Pulse width = 128 μs
- Duty cycle = 10 %
- Pb-free and RoHS compliant
The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequecy band. It features input matching; high efficiency; and a thermally-enhanced surface mount package with earless flange.
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