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GTVA10700

High Power RF GaN on SiC HEMT 700 W; 50 V; 960 – 1215 MHz
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The GTVA107001EC is a 700-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequency band. It features input matching; high efficiency; and thermally-enhanced packages; with bolt-down flange.

GTVA10700

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
GTVA107001FC-V1
Yes
GaN on SiC
0.96 GHz
1.215 GHz
700 W
20 dB
70%
50 V
Packaged Discrete Transistor
Earless
GTVA107001EC-V1
Yes
GaN on SiC
0.96 GHz
1.215 GHz
700 W
20 dB
70%
50 V
Packaged Discrete Transistor
Bolt Down
Features
  • Input matched
  • Typical pulsed CW performance (class AB); 1030 MHz; 50 V; 128 μs pulse width; 10% duty cycle; Output power P3dB = 890 W; Drain efficiency = 75%; Gain = 18 dB
  • Capable of withstanding a 10:1 load mismatch (all phase angles at 700 W peak power under pulse conditions: 50 V; 100 mA IDQ;128 μs pulse width; 10% duty cycle
  • Human Body Model Class IC (per ANSI/ESDA/JEDEC JS-001)
  • Pb-free and RoHS-compliant
Applications
  • Radar Amplifiers

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