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Peak Output Power 600W (P3dB)
Application Avionics
Power Gain 20 dB
Operating Voltage 50 V
Frequency 0.96 - 1.215 GHz
Package Type Bolt Down
Efficiency 70%
Technology GaN

High Power RF GaN on SiC HEMT 700 W, 50 V, 960 – 1215 MHz

SKU: GTVA107001EC-V1


The GTVA107001EC is a 700-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequecy band. It features input matching, high efficiency, and thermally-enhanced packages, with bolt-down flange.

Features

  • GaN on SiC HEMT technology
  • Input matched
  • Typical pulsed CW performance (class AB), 1030 MHz, 50 V, 128 µs pulse width, 10% duty cycle
    • Output power P3dB = 600 W
    • Drain efficiency = 70%
    • Gain = 18 dB
  • Human Body Model Class TBD (per ANSI/ESDA/ JEDEC JS-001)
  • Capable of withstanding a 10:1 load mismatch (all phase angles at 700 W peak power under pulse conditions: 50 V, 100 mA IDQ,128 µs pulse width, 10% duty cycle
  • Pb-free and RoHS-compliant

Documents