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GTVA123501FA-V1

High Power RF GaN on SiC HEMT 350 W; 50 V; 1200 - 1400 MHz

The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching; high efficiency; and a thermally-enhanced surface mount package with earless flange.

GTVA123501FA-V1

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Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
GTVA123501FA-V1
Yes
GaN on SiC
1.2 GHz
1.4 GHz
350 W
18 dB
71%
50 V
Packaged Discrete Transistor
Earless
Features
  • Broadband internal input matching; Typical Pulsed CW performance; 1200 – 1400 MHz; 50V; Output power 350 W; Drain Efficiency 70 %; Gain 18 dB; Pulse width 300 μs; Duty cycle 10%; Pb-free and RoHS compliant
Applications
  • L-Band Radar Amplifiers

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