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GTVA123501FA-V1

High Power RF GaN on SiC HEMT 350 W; 50 V; 1200 - 1400 MHz

The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching; high efficiency; and a thermally-enhanced surface mount package with earless flange.

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Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
GTVA123501FA-V1
Yes
GaN on SiC
1.2 GHz
1.4 GHz
350 W
18 dB
71%
50 V
Packaged Discrete Transistor
Earless
Features
  • Broadband internal input matching; Typical Pulsed CW performance; 1200 – 1400 MHz; 50V; Output power 350 W; Drain Efficiency 70 %; Gain 18 dB; Pulse width 300 μs; Duty cycle 10%; Pb-free and RoHS compliant
Applications
  • L-Band Radar Amplifiers
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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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