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GTVA12600

High Power RF GaN on SiC HEMT; 600W; 50V; 1200MHz to 1400MHz
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The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high electron mobility transistors (HEMT) for use in the 1200 to 1400 MHz frequecy band. They feature input matching; high efficiency; and thermally-enhanced packages.

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Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
GTVA126001FC-V1
Yes
GaN on SiC
1.2 GHz
1.4 GHz
600 W
20 dB
63%
50 V
Packaged Discrete Transistor
Earless
GTVA126001EC-V1
Yes
GaN on SiC
1.2 GHz
1.4 GHz
600 W
20 dB
63%
50 V
Packaged Discrete Transistor
Bolt Down
Features
  • Input matched
  • Typical pulsed CW performance (class AB); 1200 MHz; 50 V; 300 μs pulse width; 10% duty cycle; Output power (P3dB) = 600 W; Drain efficiency = 65%; Gain = 18 dB
  • Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulsed conditions: 300 μs pulse width; 10% duty cycle; VDD = 50 V; IDQ = 100 mA
  • Human Body Model Class 1C (per AnSI/ESDA/JEDEC JS-001)
  • Pb-free and RoHS compliant
Applications
  • Radar Amplifiers
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Knowledge Center

RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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