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Peak Output Power 600W (P3dB)
Application L-Band / S-Band / X-Band / C-Band / Ku-Band
Power Gain 20 dB
Operating Voltage 50 V
Frequency 1.2 - 1.4 GHz
Package Type Bolt Down / Earless
Efficiency 63%
Technology GaN

High Power RF GaN on SiC HEMT, 600W, 50V, 1200MHz to 1400MHz

SKU: GTVA126001EC-FC-V1


The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high electron mobility transistors (HEMT) for use in the 1200 to 1400 MHz frequecy band. They feature input matching, high efficiency, and thermally-enhanced packages.

Features

  • GaN on SiC HEMT technology
  • Input matched
  • Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 μs pulse width, 10% duty cycle
    • Output power P3dB = 600 W
    • Drain efficiency = 65%
    • Gain = 18 dB
  • Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulsed conditions: 300 μs pulse width, 10% duty cycle, VDD = 50 V, IDQ = 100 mA
  • Pb-free and RoHS compliant

Documents