Skip to Main Content
Contact
浏览产品 (中文)

GTVA212701FA-V2

High Power RF GaN on SiC HEMT 270 W; 48 V; 2110 – 2200 MHz

The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequecy band. It features input matching; high efficiency; and a thermally-enhanced earless package.

Product SKU
Buy Online
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTVA212701FA-V2
Yes
GaN on SiC
1.8 GHz
2.2 GHz
300 W
19 dB
38%
48 V
Earless
Features
  • Input matched
  • Typical Pulsed CW performance; 2180 MHz; 48 V; 10% duty cycle
  • Output power P3dB 300 W
  • Efficiency 68.5%
  • Gain 17.5 dB
  • Capable of handling 10:1 VSWR @ 48 V; 56.2 W (WCDMA) output power
  • Pb-free and RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers
Apply Filters
Document Type
Document Name
Application Notes
Data Sheets
Reference Designs
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Product Catalog
Sales Sheets & Flyers
Sales Terms
Need information?
Buy Online
Find a Distributor
Stay Informed

Knowledge Center

View All
RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
Continue Reading 
 Technical Articles

Footer

Wolfspeed Logo

Social Media

  • Facebook
  • Twitter
  • LinkedIn
  • YouTube
Copyright © 2022 Wolfspeed, Inc.