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GTVA212701FA V2

GTVA212701FA-V2

h-87265j-2
High Power RF GaN on SiC HEMT 270 W; 48 V; 2110 – 2200 MHz

The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequecy band. It features input matching; high efficiency; and a thermally-enhanced earless package.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTVA212701FA-V2
Yes
GaN on SiC
1.8 GHz
2.2 GHz
300 W
19 dB
38%
48 V
Earless
Product SKU
Buy Online
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTVA212701FA-V2
Yes
GaN on SiC
1.8 GHz
2.2 GHz
300 W
19 dB
38%
48 V
Earless
Features
  • Input matched
  • Typical Pulsed CW performance; 2180 MHz; 48 V; 10% duty cycle
  • Output power P3dB 300 W
  • Efficiency 68.5%
  • Gain 17.5 dB
  • Capable of handling 10:1 VSWR @ 48 V; 56.2 W (WCDMA) output power
  • Pb-free and RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers
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by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Product Catalog
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Document Type
Document Name
Application Notes
Data Sheets
Reference Designs
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Product Catalog
Sales Sheets & Flyers
Sales Terms
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