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Peak Output Power 45W
Application Telecom
Typical Power (Average) 6.3 W
Power Gain 19 dB
Operating Voltage 50 V
Frequency 1.8 - 2.2 GHz
Package Type Earless
Efficiency 27%
Technology GaN

High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 – 2170 MHz

SKU: GTVA220701FA-V1


The GTVA220701FA is a 70-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

Features

  • GaN on SiC HEMT technology
  • Input matched
  • Typical CW performance, 1880 MHz, 48 V
    • Output power at P3dB = 45 W
    • Efficiency = 60.7%
    • Gain = 21.6 dB
  • Human Body Model, Class 1A (per ANSI/ESDA/JEDEC JS-001)
  • Capable of handling 10:1 VSWR @48 V, 40 W (CW) output power
  • RoHS-compliant

Documents