Features
- Input matched
- Typical Pulsed CW performance; 1880 MHz; 48 V
- Output power P3dB 45 W
- Efficiency 60.7%
- Gain 21.6 dB
- Capable of handling 10:1 VSWR @ 48 V; 40 W (CW) output power
- RoHS compliant
GTVA220701FA-V1
High Power RF GaN on SiC HEMT 70 W; 50 V; 1805 – 2170 MHz
The GTVA220701FA is a 70-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.
Products
GTVA220701FA-V1
No filters selected, showing all 1 products
GTVA220701FA-V1
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|
GTVA220701FA-V1 | Yes | GaN on SiC | 1.8 GHz | 2.2 GHz | 45 W | 19 dB | 27% | 50 V | Earless |
Applications
- Multi-standard Cellular Power Amplifiers
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name |
|---|---|
| Application Notes | |
| Data Sheets | |
| Reference Designs | |
| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
|
| Product Catalog | |
| Sales Sheets & Flyers | |
| Sales Terms |
Knowledge Center
Continue Reading Technical Articles
Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
Continue Reading Technical Articles
Improving Pulse Fidelity in RF Power Amplifiers
A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
Continue Reading Technical Articles