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GTVA220701FA-V1

High Power RF GaN on SiC HEMT 70 W; 50 V; 1805 – 2170 MHz

The GTVA220701FA is a 70-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.

GTVA220701FA-V1

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Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTVA220701FA-V1
Yes
GaN on SiC
1.8 GHz
2.2 GHz
45 W
19 dB
27%
50 V
Earless
Features
  • Input matched
  • Typical Pulsed CW performance; 1880 MHz; 48 V
  • Output power P3dB 45 W
  • Efficiency 60.7%
  • Gain 21.6 dB
  • Capable of handling 10:1 VSWR @ 48 V; 40 W (CW) output power
  • RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers

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by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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