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Peak Output Power 170W
Application Telecom
Typical Power (Average) 50 W
Power Gain 16.8 dB
Operating Voltage 48 V
Frequency 2.62 - 2.69 GHz
Package Type Earless
Efficiency 43%
Technology LDMOS

High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz

SKU: GTVA261802FC-V1


The GTVA261802FC is a 170-watt GaN on SiC high electron mobility transistor for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

Features

  • GaN on SiC HEMT technology
  • Input matched
  • Typical Pulsed CW performance,combined outputs, 2690 MHz, 48 V, 10 μs pulse width, 10% duty cycle
    • Output power at P3dB = 170 W
    • Drain Efficiency @ P3dB = 65.5%
    • Gain @ P3dB = 15 dB
  • Capable of handling 10:1 VSWR @ 48 V, 180 W (CW) output power
  • Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS-compliant

Documents