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GTVA261802FC-V1

High Power RF GaN on SiC HEMT 170 W; 48 V; 2620 – 2690 MHz

The GTVA261802FC is a 170-watt GaN on SiC high electron mobility transistor for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTVA261802FC-V1
Yes
GaN on SiC
2.62 GHz
2.69 GHz
170 W
16.8 dB
43%
48 V
Earless
Features
  • Input matched
  • Typical Pulsed CW performance; 2690 MHz; 48 V; 10% duty cycle
  • Output power P3dB 170 W
  • Efficiency 65.5 %
  • Gain 15 dB
  • Capable of handling 10:1 VSWR @ 48 V; 180 W (CW) output power
  • Pb-free and RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers
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by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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