Features
- Input matched
- Typical Pulsed CW performance; 2690 MHz; 48 V; 10% duty cycle
- Output power P3dB 300 W
- Efficiency 62 %
- Gain 19.1 dB
- Capable of handling 10:1 VSWR @ 48 V; 70 W (CW) output power
- Pb-free and RoHS compliant
GTVA262711FA-V2
High Power RF GaN on SiC HEMT 300 W; 48 V; 2620 – 2690 MHz
The GTVA262711FA is a 300-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.
Products
GTVA262711FA-V2
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GTVA262711FA-V2
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|
GTVA262711FA-V2 | Yes | GaN on SiC | 2.62 GHz | 2.69 GHz | 300 W | 18 dB | 39% | 48 V | Earless |
Applications
- Multi-standard Cellular Power Amplifiers
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Knowledge Center
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