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GTVA31180

High Power RF GaN on SiC HEMT 180 W; 50 V; 2700 – 3100 MHz
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The GTVA31180 is a 180-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2700 to 3100 MHz frequency band. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.

GTVA31180

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
LTN/GTVA311801FA-V1
Yes
GaN on SiC
2.7 GHz
3.1 GHz
180 W
15 dB
70%
50 V
Packaged Discrete Transistor
Earless
GTVA311801FA-V1
Yes
GaN on SiC
2.7 GHz
3.1 GHz
180 W
15 dB
70%
50 V
Packaged Discrete Transistor
Earless
Features
  • Broadband internal input matching
  • Typical pulsed CW performance (class AB); 2700 – 3100 MHz; 50 V; 300 μs pulse width; 10% duty cycle; Output power at P3dB = 180 W; Drain efficiency = 70%; Gain (P3dB) = 15 dB
  • Pb-free and RoHS compliant
Applications
  • Radar Amplifiers

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