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GTVA31180

High Power RF GaN on SiC HEMT 180 W; 50 V; 2700 – 3100 MHz
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The GTVA31180 is a 180-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2700 to 3100 MHz frequency band. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.

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Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
LTN/GTVA311801FA-V1
Yes
GaN on SiC
2.7 GHz
3.1 GHz
180 W
15 dB
70%
50 V
Packaged Discrete Transistor
Earless
GTVA311801FA-V1
Yes
GaN on SiC
2.7 GHz
3.1 GHz
180 W
15 dB
70%
50 V
Packaged Discrete Transistor
Earless
Features
  • Broadband internal input matching
  • Typical pulsed CW performance (class AB); 2700 – 3100 MHz; 50 V; 300 μs pulse width; 10% duty cycle; Output power at P3dB = 180 W; Drain efficiency = 70%; Gain (P3dB) = 15 dB
  • Pb-free and RoHS compliant
Applications
  • Radar Amplifiers
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Knowledge Center

RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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