Features
- Broadband internal input matching
- Typical pulsed CW performance (class AB); 2700 – 3100 MHz; 50 V; 300 μs pulse width; 10% duty cycle; Output power at P3dB = 180 W; Drain efficiency = 70%; Gain (P3dB) = 15 dB
- Pb-free and RoHS compliant
GTVA31180
High Power RF GaN on SiC HEMT 180 W; 50 V; 2700 – 3100 MHz
The GTVA31180 is a 180-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2700 to 3100 MHz frequency band. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.
Products
GTVA31180
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GTVA31180
Product SKU | Buy Online | Request Sample | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
LTN/GTVA311801FA-V1 | Yes | GaN on SiC | 2.7 GHz | 3.1 GHz | 180 W | 15 dB | 70% | 50 V | Packaged Discrete Transistor | Earless | |||
GTVA311801FA-V1 | No | GaN on SiC | 2.7 GHz | 3.1 GHz | 180 W | 15 dB | 70% | 50 V | Packaged Discrete Transistor | Earless |
Applications
- Radar Amplifiers
Documents, Tools & Support
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