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Peak Output Power 180W
Application Radar
Power Gain 15 dB
Operating Voltage 50 V
Frequency 2.7 - 3.1 GHz
Package Type Earless
Efficiency 70%
Technology GaN on SiC

High Power RF GaN on SiC HEMT 180 W, 50 V, 2.7 - 3.1 GHz

SKU: GTVA311801FA-V1

The GTVA311801FA is a 180-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2.7 - 3.1 GHz frequency band. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.


  • GaN on SiC HEMT technology
  • Broadband internal input matching
  • Typical pulsed CW performance (class AB), 2.7 - 3.1 GHz, 50 V, 300 μs pulse width, 10% duty cycle
    • Output power at P3dB = 180 W
    • Drain efficiency = 70%
    • Gain (P3dB) = 15 dB
  • Pb-free and RoHS compliant



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