Features
- Broadband internal input and output matching
- Typical pulsed CW performance (class AB); 3500 MHz; 50 V; 300 μs pulse width; 10% duty cycle; Output power at P3dB = 500 W; Drain efficiency = 65%; Gain = 13 dB
- Pb-free and RoHS compliant
GTVA35500
High Power RF GaN on SiC HEMTs 500 W; 50 V; 2900 – 3500 MHz
The GTVA355001EC is a 500-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2900 to 3500 MHz frequency band. Featuring input and output matching; high efficiency; and a thermally-enhanced package.
Products
GTVA35500
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GTVA35500
Product SKU | Buy Online | Request Sample | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GTVA355001EC | Yes | GaN on SiC | 2.9 GHz | 3.5 GHz | 500 W | 65% | 50 V | Packaged Discrete Transistor | Bolt Down | ||||
LTN/GTVA355001EC-V1 | No | GaN on SiC | 2.9 GHz | 3.5 GHz | 500 W | >11.5 dB | 65% | 50 V | Packaged Discrete Transistor | Bolt Down |
Applications
- Radar Amplifiers
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Knowledge Center
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