Exceeding Wideband Power Amplifier Design Needs for 5G Power & Beyond

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.

Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.

Wolfspeed’s cutting edge Silicon Carbide 650 V MOSFET family opens up new performance levels in a wide range of applications for your power designs.