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GaN on SiC or GaN on Si?

Jun 20, 2019
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GaN on SiC or GaN on Si?
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GaN on SiC

RF Power Amplification 101: Handling Non-Idealities

This is the third and final part of the RF Power Amplification 101 Series and takes real-world waveforms and transistor behavior into account as we revisit gate biasing and efficiency.
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 Technical Articles
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GaN on SiC

RF Power Amplification 101: Amplifier Classes

The purpose of the RF PA is to increase the power of the RF input signal. This is achieved by applying the signal to the gate. This article compares some of the common amplifier classes, starting with the most-linear but least-efficient Class A to the still-linear (due to the ideal transistor) but more-efficient Class F and inverse-F.
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 Technical Articles
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GaN on SiC

RF Power Amplification 101: Waveform Basics

RF power is delivered by the power amplifier (PA), the final stage of amplification before the antenna, with each application placing on the PA its own set of requirements in terms of frequency, bandwidth, load, power, efficiency, and linearity. This article is the first in a series that will discuss these considerations.
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 Technical Articles
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