Power Amplifier Design Flow Using GaN Large Signal Models in AWR

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.

Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.

Astrodyne TDI (ATDI) is leveraging Wolfspeed’s Silicon Carbide technology to address key challenges when designing equipment for a global market. Read on to see how ATDI’s Kodiak power supply and Wolfspeed’s Silicon Carbide gives customers the ability to use the same control and power topology across different utility voltage levels, ensuring high performance regardless of the input voltage level.