Contact
中文
GaN on SiC

RF Power Amplification 101: Waveform Basics

Aug 10, 2021
Share on FacebookShare on TwitterShare on LinkedInShare in an email
Home
RF Power Amplification 101: Waveform Basics
Want more?
Need information?
Request Samples
Visit the Sample Center
Large Signal Models

More Articles

View All
imagine-future-of-silicon-carbide
Silicon Carbide

Summer Seminar Series 2021

Join Wolfspeed silicon carbide power experts for a five-week seminar series. Built with the design engineer in mind, the series covers a variety of topics from deciphering data sheets to designing with SiC. In addition to the deep-dive technical sessions, attendees will hear from Wolfspeed Co-Founder Dr. John Palmour as well as a panel of industry leaders.
View Now 
 Webinars
Jamming man-portable pack2
GaN on SiC

Countering RCIEDs with GaN’s Bandwidth & Power Density Advantages

Counter-RCIED devices used by the military and law enforcement rely on jamming wireless trigger signals. This article will discuss how GaN’s high-temperature reliability and power density capability enables jammer equipment to meet system SWaP-C requirements.
Continue Reading 
 Blog
xband-hero-image
GaN on SiC

Integrated Expertise Delivers the Best GaN Solutions for X-Band PAs

Gallium nitride is the undisputed technology for achieving high-efficiency operation in high-frequency applications, such as those at X-band (8–12 GHz). But device selection for X-band applications doesn’t end with choosing the material technology, because turning the bulk material characteristics into high-performance GaN on SiC devices is quite another matter.
Continue Reading 
 Technical Articles
Cree Wolfspeed Logo
FacebookTwitterLinkedInYouTube
  • Contact
  • Where to Buy
  • Document Library
  • Knowledge Center
  • News
  • Events
  • Privacy Policy
  • Terms of Use
Copyright © 2021 Cree Wolfspeed