Contact
中文
Silicon Carbide

シリコンカーバイドで「パワーの未来」を変革する

Guy Moxey, Senior Director of Power Products
Jun 26, 2019
English
Share on FacebookShare on TwitterShare on LinkedInShare in an email
Wolfspeedトップ
シリコンカーバイドで「パワーの未来」を変革する
Technical Support
Power Applications Forum
Sales Support
Stay Informed
SpeedFit Design Simulator
Technical Support
Sales Support
Stay Informed
SpeedFit Design Simulator

More Articles

View All
Power
|
炭化ケイ素

クリー社 シリコンカーバイドを使ったパワーエレクトロニクス回路設計ガイダンス

Now that silicon carbide has been established as a transformative technology, many power designers are focusing on SiC device level qualification, reliability and consistency of supply. Wolfspeed is leading the pack with comprehensive proven product reliability across its entire vertical supply chain, ensuring that the unprecedented market demand for SiC can be realized throughout the next decade and beyond.
Continue Reading 
 Webinars

シリコンカーバイドMOSFETの設計者ガイド、ゲート駆動回路の設計ノウハウ

In high power applications, Silicon Carbide MOSFETs can enable lower losses with faster switching speeds than their silicon counterparts, and to maximize those gains you’ll need to drive them effectively. Learn more about the nuances of designing SiC gate drive circuits in the next installment of Wolfspeed’s Designer’s Guide to Silicon Carbide Power: Gate Drive Considerations.
Continue Reading 
 Webinars
Wolfspeed Logo
FacebookTwitterLinkedInYouTube
  • Contact
  • Where to Buy
  • Document Library
  • Knowledge Center
  • News
  • Events
  • Privacy Policy
  • Terms of Use
Copyright © 2022 Wolfspeed, Inc.