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GaN on SiC

Webinar: GaN HEMTs Thermal Resistance Equals Reliability

Manuel F. Romero Paz
Oct 08, 2020
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Wolfspeed RF GaN meets 5G demands on PA design

Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
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 Technical Articles

In The Studio: Silicon Carbide vs GaN vs Silicon

Silicon Carbide, GaN, and silicon all have their place, but how do you know which is the best fit for your power system? Guy Moxey and special guest John Palmour, CTO and Co-Founder of Wolfspeed, take up this debate in the first edition of In the Studio. Join them as they discuss the merits and tradeoffs of Silicon Carbide vs GaN vs silicon.
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 In The Studio

In The Studio: Silicon Carbide Enabling End Systems – what’s next?

The silicon IGBT has been an industry staple for years. Why transition to Silicon Carbide now? As mass electrification drives the need for cost-effective economies of scale, how do improvements in efficiency and power density play into consideration? Listen to Wolfspeed’s Guy Moxey talk to CTO and Co-Founder John Palmour as they discuss how Silicon Carbide is enabling end systems of the future.
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 In The Studio


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