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GaN on SiC Range and Thermal Awareness Eases X-Band Radar Design

As the need for smaller and higher performing radar systems is increasing, GaN on SiC has become the technology of choice for next generation radar systems. This article will discuss GaN on SiC MMIC solutions to thermal concerns for next generation radar systems during continuous wave (CW) operation.
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GaN on SiC

RF Power Amplification 101: Handling Non-Idealities

This is the third and final part of the RF Power Amplification 101 Series and takes real-world waveforms and transistor behavior into account as we revisit gate biasing and efficiency.
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Silicon Carbide MOSFETs

Effective Measurement of SiC Signals

Silicon Carbide technology surpasses Silicon IGBT applications for high power systems, with WolfPACK family of modules that increase system reliability and lower BOM and maintenance costs. This article will focus on methods for measuring SiC-related signals and recommend associated equipment while demonstrating examples with the CAB011MI2FM3 half-bridge power module.
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GaN on SiC

RF Power Amplification 101: Amplifier Classes

The purpose of the RF PA is to increase the power of the RF input signal. This is achieved by applying the signal to the gate. This article compares some of the common amplifier classes, starting with the most-linear but least-efficient Class A to the still-linear (due to the ideal transistor) but more-efficient Class F and inverse-F.
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Silicon Carbide MOSFETs

Advantages of SiC over Si for Unidirectional On-Board Chargers

This article is part of a two-part series that discusses the design considerations of OBC systems and the advantages that SiC has over Si in such designs. The practical advantages of implementing SiC over Si for OBCs are detailed in a head-to-head comparison of Si and SiC based OBC designs with a cost and system benefit breakdown.
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GaN on SiC

RF Power Amplification 101: Waveform Basics

RF power is delivered by the power amplifier (PA), the final stage of amplification before the antenna, with each application placing on the PA its own set of requirements in terms of frequency, bandwidth, load, power, efficiency, and linearity. This article is the first in a series that will discuss these considerations.
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Silicon Carbide MOSFETs

Wolfspeed powers Telcodium’s lightest 5kW Portable Power Station

SiC is a preferred choice when it comes to high power applications. When Telcodium started desiging their portable power stations, they trusted Wolfspeed for their power electronics requirement. This electric power system,'The Beast' is compact, lightweight and can be used indoor. Read more about Telcodium's journey and how Wolfspeed partnered with them in this process.
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GaN on SiC

Integrated Expertise Delivers the Best GaN Solutions for X-Band PAs

Gallium nitride is the undisputed technology for achieving high-efficiency operation in high-frequency applications, such as those at X-band (8–12 GHz). But device selection for X-band applications doesn’t end with choosing the material technology, because turning the bulk material characteristics into high-performance GaN on SiC devices is quite another matter.
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Automotive

Why Choose SiC over Si for Your Next Bidirectional On-Board Charger Design?

This article discusses the design considerations of on-board charger (OBC) systems and the advantages that SiC has over Si for OBCs, with a focus on bidirectional chargers. The practical advantages of implementing SiC over Si for OBCs are detailed in a comparison of reference designs for a Si and SiC OBC, with a cost savings analysis and breakdown of the system benefits.
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