Silicon Carbide Power MOSFET
C3M Planar MOSFET Technology
N-Channel Enhancement Mode

SKU: C3M0016120K

Wolfspeed extends its leadership in SiC technology by introducing the industry’s lowest Rds_(on) SiC MOSFET at 1200V in a discrete package. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. Using the separate Kelvin source pin can further reduce switching losses by as much as 30% compared to the traditional 3-lead TO-247 package. Featuring the lowest available on-resistance combined with a low gate charge, the C3M0016120K is ideally suited for three-phase, bridgeless PFC topologies as well as inverter and charger applications.

See our complete list of reference designs for examples of popular topologies commonly used with SiC today.

Features

• Industry-leading 16mΩ R_DS(on)
• 1200V V_BR (minimum) across entire operating temperature range [-40˚C – 175˚C]
• +15V gate drive voltage
• Low-impedance package with Kelvin source pin
• > 8mm of creepage/clearance between drain and source
• High-speed switching with low output capacitance
• Fast intrinsic diode with low reverse recovery (Q_RR)
• Easy to parallel and simple to drive

Target Applications

• Solar and Energy Storage Systems
• Electric Vehicle Charging
• Uninterruptible Power Supply (UPS)
• Motor Control and Drives
• Switched-mode Power Supplies (SMPS)

Download our LTspice Models or try our SpeedFit design simluator.