| Document Name | Date Updated | Download |
|---|---|---|
| C3M0016120K | May 17, 2019 |
C3M0016120K
| Blocking Voltage | 1200 V | |
|---|---|---|
| Current Rating at 25°C | 115 A | |
| RDS(ON) at 25°C | 16 mΩ | |
| Package | TO-247-4 | |
| Gate charge total | 211 nC | |
| Maximum junction temperature | 175 °C | |
| Reverse-Recovery Charge (Qrr) | 1261 nC | |
| Output Capacitance | 230 pF | |
| Reverse-Recover Time (Trr) | 27 ns | |
Silicon Carbide Power MOSFET
C3M Planar MOSFET Technology
N-Channel Enhancement Mode
SKU: C3M0016120K
Wolfspeed extends its leadership in SiC technology by introducing the industry’s lowest Rds(on) SiC MOSFET at 1200V in a discrete package. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. Using the separate Kelvin source pin can further reduce switching losses by as much as 30% compared to the traditional 3-lead TO-247 package. Featuring the lowest available on-resistance combined with a low gate charge, the C3M0016120K is ideally suited for three-phase, bridgeless PFC topologies as well as inverter and charger applications.
See our complete list of reference designs for examples of popular topologies commonly used with SiC today.
Features
- Industry-leading 16mΩ RDS(on)
- 1200V VBR (minimum) across entire operating temperature range [-40˚C – 175˚C]
- +15V gate drive voltage
- Low-impedance package with Kelvin source pin
- > 8mm of creepage/clearance between drain and source
- High-speed switching with low output capacitance
- Fast intrinsic diode with low reverse recovery (QRR)
- Easy to parallel and simple to drive
Target Applications
- Solar and Energy Storage Systems
- Electric Vehicle Charging
- Uninterruptible Power Supply (UPS)
- Motor Control and Drives
- Switched-mode Power Supplies (SMPS)
Download our LTspice Models or try our SpeedFit design simluator.