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Blocking Voltage 1200 V
Current Rating at 25°C 115 A
RDS(ON) at 25°C 16 mΩ
Package TO-247-4
Gate charge total 211 nC
Maximum junction temperature 175 °C
Reverse-Recovery Charge (Qrr) 1261 nC
Output Capacitance 230 pF
Reverse-Recover Time (Trr) 27 ns

Silicon Carbide Power MOSFET
C3M Planar MOSFET Technology
N-Channel Enhancement Mode

SKU: C3M0016120K

Wolfspeed extends its leadership in SiC technology by introducing the industry’s lowest Rds(on) SiC MOSFET at 1200V in a discrete package. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. Using the separate Kelvin source pin can further reduce switching losses by as much as 30% compared to the traditional 3-lead TO-247 package. Featuring the lowest available on-resistance combined with a low gate charge, the C3M0016120K is ideally suited for three-phase, bridgeless PFC topologies as well as inverter and charger applications.

See our complete list of reference designs for examples of popular topologies commonly used with SiC today.


  • Industry-leading 16mΩ RDS(on)
  • 1200V VBR (minimum) across entire operating temperature range [-40˚C – 175˚C]
  • +15V gate drive voltage
  • Low-impedance package with Kelvin source pin
  • > 8mm of creepage/clearance between drain and source
  • High-speed switching with low output capacitance
  • Fast intrinsic diode with low reverse recovery (QRR)
  • Easy to parallel and simple to drive

Target Applications

  • Solar and Energy Storage Systems
  • Electric Vehicle Charging
  • Uninterruptible Power Supply (UPS)
  • Motor Control and Drives
  • Switched-mode Power Supplies (SMPS)

Download our LTspice Models or try our SpeedFit design simluator.



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