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Blocking Voltage 1200 V
Current Rating at 25°C 63 A
RDS(ON) at 25°C 32 mΩ
Package TO-247-3
Gate charge total 114 nC
Maximum junction temperature 175 ˚C
Reverse-Recovery Charge (Qrr) 848 nC
Output Capacitance 129 pF
Reverse-Recover Time (Trr) 69 ns

Silicon Carbide Power MOSFET
C3M Planar MOSFET Technology
N-Channel Enhancement Mode

SKU: C3M0032120D


Wolfspeed continues its leadership in SiC technology by offering MOSFETs in a wide variety of on-resistances and package options, enabling designers to select the right part for their applications. The efficiency gained by moving from a silicon-based solution to silicon carbide can reduce system size, weight, complexity, and cost in most high-power applications.  Based on 3rd generation planar MOSFET technology, the C3M0032120K includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode.  Wolfspeed has designed 3rd generation MOSFETs with increased CGS/CGD ratio for better hard-switching performance.  Soft-switching applications can also benefit from the more linear COSS behavior. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance.

Features

  • Minimum of 1200V Vbr across entire operating temperature range
  • High-speed switching with low output capacitance
  • High blocking voltage with low RDS(on)
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive

Download our LTspice or PLECS models or try our SpeedFit design simulator

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