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Blocking Voltage 1200 V
Current Rating at 25°C 63 A
RDS(ON) at 25°C 32 mΩ
Package TO-247-4
Gate charge total 118 nC
Maximum junction temperature 175 °C
Reverse-Recovery Charge (Qrr) 478 nC
Output Capacitance 129 pF
Reverse-Recover Time (Trr) 27 ns

Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode

SKU: C3M0032120K

Wolfspeed continues its leadership in SiC technology by offering MOSFETs in a wide variety of on-resistances and package options, enabling designers to select the right part for their applications. The efficiency gained by moving from a silicon-based solution to silicon carbide can reduce system size, weight, complexity, and cost in most high-power applications.  Based on 3rd generation planar MOSFET technology, the C3M0032120K includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode.  Using the separate Kelvin source pin in the TO-247-4 package can further increase efficiency by reducing switching losses as much as 30% compared to the traditional 3-lead TO-247 package.  The C3M0032120K can be used in any power supply application, including bridgeless PFCs, inverters, and chargers.

See our complete list of reference designs for examples of popular topologies commonly used with SiC today.


  • 1200V VBR (minimum) across entire operating temperature range [-40˚C – 175˚C]
  • +15V gate drive voltage
  • Low-impedance package with Kelvin source pin
  • > 8mm of creepage/clearance between drain and source
  • High-speed switching with low output capacitance
  • Fast intrinsic diode with low reverse recovery (QRR)
  • Easy to parallel and simple to drive

Target Applications

  • Solar and Energy Storage Systems
  • Electric Vehicle Charging
  • Uninterruptible Power Supply (UPS)
  • Motor Control and Drives
  • Switched-mode Power Supplies (SMPS)

Download our LTspice Models or try our SpeedFit design simluator.



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