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Blocking Voltage 1200 V
Current Rating at 25°C 100 A
RDS(ON) at 25°C 21 mΩ
Package Bare Die
Gate charge total 162 nC
Maximum junction temperature 175 ºC
Reverse-Recovery Charge (Qrr) 928 nC
Reverse-Recover Time (Trr) 42 ns

Silicon Carbide Power MOSFET
C3M Planar MOSFET Technology
N-Channel Enhancement Mode

SKU: CPM3-1200-0021A

This new device achieves a remarkable 21mΩ Rds(on) and is capable of 1200V blocking voltage across the entire operating temperature range thereby greatly reducing derating requirements. It can be applied in solar inverter, EV motor drive, high voltage DC/DC converters, switched mode power supplies, and load switch.


  • C3M SiC MOSFET technlogy
  • High Blocking Voltage with Low RDS(on)
  • Easy to parallel and simple to drive
  • Resistant to Latch-up
  • Optimized gate resistance for modules



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