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Blocking Voltage 1200 V
Current Rating at 25°C 30 A
Rds(on) at 25°C 75 mΩ
Package Bare Die
Gate charge total 54 nC
Maximum junction temperature 175 ºC
Reverse-Recovery Charge (Qrr) 279 nC
Reverse-Recover Time (Trr) 48 ns

Silicon Carbide Power MOSFET
C3M Planar MOSFET Technology
N-Channel Enhancement Mode

SKU: CPM3-1200V-0075A


This new device achieves a remarkable 75mΩ Rds(on) and is capable of 1200V blocking voltage across the entire operating temperature range thereby greatly reducing derating requirements. It can be applied in renewable energy, EV battery chargers, high voltage DC/DC converters, and switch mode power supplies.

Features

  • C3M SiC MOSFET technlogy
  • High Blocking Voltage with Low RDS(on)
  • High speed switching with low capacitance
  • Easy to parallel and simple to drive
  • Fast intrinsic diode with low reserve recovery (Qrr)

Documents