| Document Name | Date Updated | Download |
|---|---|---|
|
E3M0065090D
Version: A
|
Aug 3, 2018 |
E3M0065090D
| Blocking Voltage | 900 V | |
|---|---|---|
| Current Rating at 25°C | 35 A | |
| Rds(on) at 25°C | 65 mΩ | |
| Package | TO-247-3 | |
| Gate charge total | 30 nC | |
| Maximum junction temperature | 150 ˚C | |
| Reverse-Recovery Charge (Qrr) | 150 nC | |
| Output Capacitance | 60 pF | |
| Reverse-Recover Time (Trr) | 35 ns | |
E-Series Automotive Silicon Carbide MOSFET
SKU: E3M0065090D
Wolfspeed extends its leadership in Silicon Carbide by introducing the E-Series line of SiC MOSFETs. The Industry’s first automotive qualified, PPAP capable and humidity resistant MOSFET available in the industry. It features Wolfspeed’s 3rd generation rugged planar technology offering the industry’s lowest switching losses and highest figure of merit, the E-Series MOSFET is optimized for use in EV battery chargers and high voltage DC/DC converters and is featured in Wolfspeed’s 6.6kW Bi-Directional On-Board Charger reference design, which can be found here.
Features
- Automotive Qualified (AEC-Q101) and PPAP Capable
- Minimum of 900V Vbr across entire operating temperature range
- High-speed switching with low output capacitance
- High blocking voltage with low RDS(on)
- Fast intrinsic diode with low reverse recovery (Qrr)
- Easy to parallel and simple to drive
Download our LTspice or PLECS models or try our SpeedFit design simulator.
Documents
Data Sheets
Articles and Papers
Power Application Notes
| Document Name | Date Updated | Download |
|---|---|---|
|
20kW Full Bridge Resonant LLC Converter
Version: -
|
May 17, 2019 | |
|
6.6kW Bi-directional EV on-board charger
Version: A
|
Jul 30, 2018 | |
|
SiC MOSFET Double Pulse Fixture
[Design only; boards no longer available]
Gate Driver Board for 3rd generation MOSFETs. https://www.wolfspeed.com/power/products/gate-driver-boards/cgd15sg00d2 |
Jun 26, 2019 |