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Module Size 106 x 62 x 30 mm
Configuration Half-bridge
Blocking Voltage 1200 V
Current Rating 120 A
RDS(ON) at 25°C 13 mΩ
Package 62mm
Maximum junction temperature 150 °C
Total Capacitive Charge (QC(typ)) 1.1 µC
Switching Energy ESW 2.1 mJ (Tj = 150°C)

1200-V, 13.0-mΩ, Silicon Carbide, Half-Bridge Module


Technical features

  • Ultra-low loss
  • High-efficiency operation
  • Zero reverse-recovery current from diode
  • Zero turn-off tail current from MOSFET
  • Normally-off, fail-safe device operation
  • Ease of paralleling
  • Copper baseplate and aluminum nitride insulator

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