Wolfspeed’s 1700 V Discrete Silicon Carbide (SiC) Schottky Diodes meet higher efficiency standards than standard silicon based solutions, while reaching higher frequencies and power densities. Silicon Carbide Schottky diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of Silicon Carbide products, these diodes are able to provide lower overall system costs in a variety of diverse applications.
Product SKU | Data Sheet | Blocking Voltage | Current Rating | Generation | Forward Voltage(VF(type)) | Maximum Continuous Current (IF) | Total Power Dissipation (PTOT) | Package | Qualification | Recommended For New Design? |
|---|---|---|---|---|---|---|---|---|---|---|
C3D10170H | 1700 V | 10 A | Gen 3 | 1.5 V | 10 A | 231 W | TO-247-2 | Industrial | No |
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| Application Notes | |
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| Product Catalog | |
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| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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