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1200 V; 160 mΩ; ; TO-247-3 package; Discrete Silicon Carbide (SiC) MOSFET
NOTE: Not recommended for new designs.

Wolfspeed’s family of 1200 V Silicon Carbide (SiC) MOSFETs are optimized for use in high power applications such as UPS; motor control and drives; switched-mode power supplies; solar and energy storage systems; electric vehicle charging; high-voltage DC/DC converters; and more.

Based on 3rd generation technology; the wide variety of on-resistances and package options enables designers to select the right part for their applications.

Pairing Wolfspeed’s 1200 V Silicon Carbide diodes with Silicon Carbide MOSFETs creates a powerful combination of higher efficiency for demanding applications.



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Recommended For New Design?
1200 V
160 mΩ
  • Higher system efficiency
  • Reduced cooling requirements
  • Avalanche ruggedness
  • Increased system switching frequency
  • Industry-leading RDS(on)
  • High-speed switching
  • Low capacitances
  • Easy to parallel
  • Simple to drive
  • Pb-free plating
  • RoHS-compliant
  • Halogen-free

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This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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