Skip to Main Content
Contact
浏览产品 (中文)

CPM2-1700-0045A

Wolfspeed Bare Die
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode
NOTE: Not recommended for new designs. CPM3-1700-R020E is the recommended replacement.

Wolfspeed introduces its latest breakthrough in Silicon Carbide (SiC) power device technology: the industry’s first 1700-V 45mOhm Silicon Carbide MOSFET. Optimized for high-frequency power electronics applications; including renewable-energy inverters; battery charging systems; and three-phase industrial power supplies; the new 1700-V platform enables smaller and higher-efficiency next-generation power conversion systems.

Features

  • 1700V of blocking voltage with low RDS(on)
  • High-speed switching with low capacitances
  • Avalanche ruggedness
  • Fast intrinsic diode with low reverse recovery (Qrr)

CPM2-1700-0045A

Product SKU
Buy Online
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Generation
Recommended For New Design?
CPM2-1700-0045A
1700 V
37 mΩ
75 A
158 nC
180 pF
1660 nC
25 ns
175 °C
Gen 2
No

Documents

Apply Filters
Document Type
Document Name
Data Sheets
Need information?
Ready to buy?
Find a Distributor
Want to keep in touch?

Knowledge Center

View All
Power
|
Automotive

Wolfspeed Grows to Meet Supply Challenge and Launches High Performance Gen 3+ Die

Wolfspeed launches automotive 750 V E-Series Bare Die Silicon Carbide MOSFET. The product is automotive qualified with high blocking voltage and low Rds(on), enabling low conduction losses and highest figures of merit in the most demanding applications, such as electric vehicle powertrain and solid-state circuit breakers.
Continue Reading 
 Technical Articles

Footer

Wolfspeed Logo

Social Media

  • Facebook
  • Twitter
  • LinkedIn
  • YouTube
Copyright © 2023 Wolfspeed, Inc.