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1700V Bare Die SiC MOSFETs – Gen 2

1700V Bare Die SiC MOSFETs – Gen 2

1700V Bare Die SiC MOSFETs - Gen 2
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode

The industry’s first 1700-V 45mOhm SiC MOSFET. Optimized for high-frequency power electronics applications; including renewable-energy inverters; battery charging systems; and three-phase industrial power supplies; the new 1700-V platform enables smaller and higher-efficiency next-generation power conversion systems.

See our complete list of reference designs for examples of popular topologies commonly used with SiC today. Download our LTspice or PLECS models or try our SpeedFit design simulator.

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Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
reverse-recoveryCharge
reverse-recoverTime
Maximum Junction Temperature
Generation
Recommended For New Design?
CPM2-1700-0045A
1700 V
37 mΩ
75 A
158 nC
180 pF
175 °C
Gen 2
Yes
Product SKU
Buy Online
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
reverse-recoveryCharge
reverse-recoverTime
Maximum Junction Temperature
Generation
Recommended For New Design?
CPM2-1700-0045A
1700 V
37 mΩ
75 A
158 nC
180 pF
175 °C
Gen 2
Yes
Features
  • 1700V of blocking voltage with low RDS(on)
  • High-speed switching with low capacitances
  • Avalanche ruggedness
  • Fast intrinsic diode with low reverse recovery (Qrr)
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