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碳化硅金屬氧化物半導體場效應晶體管

本頁之後的所有內容均為英文。

Wolfspeed 金屬氧化物半導體場效應晶體管使開關頻率更高,並且縮小了像電感器、電容器、篩選器、變壓器這樣的組件的尺寸。我們的碳化硅金屬氧化物半導體場效應晶體管可取代硅器件,有更高的阻斷電壓(>1700V),雪崩額定值>1800V,開關和傳導損耗也較低。我們在五年前製造了首個碳化硅金屬氧化物半導體場效應晶體管,並且自那時起一直都在不斷完善這項技術。

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Bare Die Silicon Carbide MOSFETs |电源产品
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CPM3-0650-0060A
New
650 V
60 mΩ
37 A
80 pF
151 nC
11 ns
175 °C
Gen 3
Yes
650 V
45 mΩ
49 A
100 pF
247 nC
13 ns
175 °C
Gen 3
Yes
650 V
15 mΩ
120 A
290 pF
510 nC
22 ns
175 °C
Gen 3
Yes
900 V
65 mΩ
32 A
70 pF
220 nC
22 ns
175 °C
Gen 3
Yes
900 V
30 mΩ
66 A
137 pF
545 nC
62 ns
175 °C
Gen 3
Yes
900 V
10 mΩ
194 A
360 pF
1300 nC
36 ns
175 °C
Gen 3
Yes
1200 V
17 mΩ
134 A
221 pF
1242 nC
53 ns
175 °C
Gen 3
Yes
1200 V
17 mΩ
134 A
220 pF
1100 nC
52 ns
175 °C
Gen 3
Yes
1200 V
160 mΩ
18 A
55 pF
192 nC
20 ns
175 °C
Gen 2
No
1200 V
80 mΩ
36 A
92 pF
152 nC
24 ns
175 °C
Gen 2
No
1200 V
40 mΩ
60 A
157 pF
964 nC
63 ns
175 °C
Gen 2
No
1200 V
25 mΩ
81 A
235 pF
406 nC
45 ns
175 °C
Gen 2
No
1200 V
21 mΩ
100 A
180 pF
928 nC
34 ns
175 °C
Gen 3
Yes
1200 V
32 mΩ
63 A
130 pF
231 nC
58 ns
175 °C
Gen 3
Yes
1200 V
16 mΩ
112 A
230 pF
1238 nC
30 ns
175 °C
Gen 3
Yes
1200 V
75 mΩ
30 A
58 pF
109 nC
25 ns
175 °C
Gen 3
Yes
1200 V
13 mΩ
149 A
284 pF
1800 nC
43 ns
175 °C
Gen 3
Yes
1700 V
17.5 mΩ
120 A
188 pF
2557 nC
43 ns
175 °C
Gen 3
Yes
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