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  • 1200 V CMHSA Discrete MOSFETs

1200 V CMHSA Discrete MOSFETs

Industrial qualified Discrete silicon carbide (SiC) MOSFETs in TSC (U2), TO-247-4, and TO-263-7 XL packages
Wolfspeed's newest family of 1200 V discrete SiC MOSFETs delivers unparalleled performance in hard switched applications. The CMHSA family utilizes a fast and soft body diode that enables fast switching with minimal overshoot and ringing, expanding the usable design space for the engineer to tune and optimize the performance in the application. The CMHSA family provides improved Eon, Err, and Eoff losses compared to the C3M family of devices, while maintaining a low RDS(on) temperature coefficient. This balanced approach provides maximum performance and efficiency across a wide range of both hard-switched and soft-switched topologies. In addition to improved switching performance, the CMHSA family provides transient overvoltage capability, increased lifetime at elevated bus voltages, and wide gate voltage compatibility for simplified drop-in capability.
Composite image of three of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFETs in TO-247-4, TO-263-7 XL, & TSC (U2) packages.
Composite image of three of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFETs in TO-247-4, TO-263-7 XL, & TSC (U2) packages.
Composite image of the top & bottom of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFET in a TSC (U2) package.
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 XL package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Graph for the Turn-on waveform displaying clean switching at 125C and low RG
Graph representing the reverse recovery waveform displaying Fast and soft reverse recovery at 125C
Composite image of three of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFETs in TO-247-4, TO-263-7 XL, & TSC (U2) packages.
Composite image of the top & bottom of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFET in a TSC (U2) package.
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 XL package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Graph for the Turn-on waveform displaying clean switching at 125C and low RG
Graph representing the reverse recovery waveform displaying Fast and soft reverse recovery at 125C
Composite image of three of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFETs in TO-247-4, TO-263-7 XL, & TSC (U2) packages.
Composite image of the top & bottom of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFET in a TSC (U2) package.
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 XL package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Graph for the Turn-on waveform displaying clean switching at 125C and low RG
Graph representing the reverse recovery waveform displaying Fast and soft reverse recovery at 125C
  • Overview
  • Parametric Data
  • Product Details
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  • Overview
  • Parametric Data
  • Product Details
  • Featured Resources
  • Tools & Support

Parametric Data

1200 V CMHSA Discrete MOSFETs

No filters selected, showing all 12 products

1200 V CMHSA Discrete MOSFETs - Filter By

1200 V CMHSA Discrete MOSFETs

Product SKU
Data Sheet
Status
Blocking Voltage
RDS(ON) at 25°C
Tjmin
Tjmax
Package
Qualification
Technology
CMHSA021120K
Coming
Soon
Coming Soon
1200 V
25 mΩ
-40 °C
175 °C
TO-247-4
Industrial
CMHSA
CMHSA021120J2
Coming
Soon
Coming Soon
1200 V
25 mΩ
-40 °C
175 °C
TO-263-7 XL
Industrial
CMHSA
CMHSA021120U2
Coming
Soon
Coming Soon
1200 V
25 mΩ
-40 °C
175 °C
TSC (U2)
Industrial
CMHSA
CMHSA032120K
Coming
Soon
Coming Soon
1200 V
36 mΩ
-40 °C
175 °C
TO-247-4
Industrial
CMHSA
CMHSA032120J2
Coming
Soon
Coming Soon
1200 V
36 mΩ
-40 °C
175 °C
TO-263-7 XL
Industrial
CMHSA
CMHSA032120U2
Coming
Soon
Coming Soon
1200 V
36 mΩ
-40 °C
175 °C
TSC (U2)
Industrial
CMHSA
CMHSA040120K
Coming
Soon
Coming Soon
1200 V
47 mΩ
-40 °C
175 °C
TO-247-4
Industrial
CMHSA
CMHSA040120J2
Coming
Soon
Coming Soon
1200 V
47 mΩ
-40 °C
175 °C
TO-263-7 XL
Industrial
CMHSA
CMHSA040120U2
Coming
Soon
Coming Soon
1200 V
47 mΩ
-40 °C
175 °C
TSC (U2)
Industrial
CMHSA
CMHSA060120K
Coming
Soon
Coming Soon
1200 V
65 mΩ
-40 °C
175 °C
TO-247-4
Industrial
CMHSA
CMHSA060120J2
Coming
Soon
Coming Soon
1200 V
65 mΩ
-40 °C
175 °C
TO-263-7 XL
Industrial
CMHSA
CMHSA060120U2
Coming
Soon
Coming Soon
1200 V
65 mΩ
-40 °C
175 °C
TSC (U2)
Industrial
CMHSA

End of Section

Product Details

Features

  • Low Eon and Err
  • Soft body diode with low overshoot and ringing
  • Low RDS(on) temperature coefficient
  • High Ciss/Crss ratio
  • Wide gate voltage compatibility [-4 to 0 V / 15 to 18V]
  • High transient voltage compatibility
  • For U2 package: pin-to-pin compatible with other TSC packages

Benefits

  • Ideal for hard-switched applications
  • Lower losses enabling higher efficiency switching frequency, and cooling requirements
  • Enables system level price-performance optimization

Typical Applications

  • Low voltage industrial drives
  • Power supply
  • Servo drives
  • Fast charging
  • Energy storage systems
  • Solar – commercial applications

Featured Resources

Design Tools

SpeedFit Design SimulatorLTspice & PLECS ModelsSpeedVal Kit™ Modular Evaluation Platform

Technical Support

Power Applications Forum

Featured Documents

Gen 4 Silicon Carbide Technology: Redefining Performance and Durability in High-Power Applications
New
PRD-06752: PCB Layout Techniques for Discrete SiC MOSFETs
PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages

Documents, Tools & Support

  • Technical & Sales Documents
  • Tools & Support

Documents

Document Type
Document Name
Last Updated
Application Notes
PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages
02/2025
Application Notes
PRD-04814: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies
01/2025
Application Notes
PRD-08907: Mitigating EMI with SiC Solutions in Renewable Energy & Grid-Connected Power Converters
New
01/2025
Application Notes
PRD-06752: PCB Layout Techniques for Discrete SiC MOSFETs
09/2024
Application Notes
PRD-08710: Measuring Stray Inductance in Power Electronics Systems
07/2024
Application Notes
PRD-08367: EV Charging Power Topologies Design Guidebook
01/2024
Application Notes
PRD-03043: Measuring Switching and Conduction Losses in LTspice® Simulation Software
01/2024
Application Notes
PRD-06701: Thermal Management of Bottom-Side Cooled Surface-Mount Devices & Design Considerations
12/2023
Application Notes
PRD-08296: SiC MOSFET Short Circuit Events
11/2023
Application Notes
PRD-06933: Capacitance Ratio and Parasitic Turn-on
01/2023
Application Notes
PRD-05653: Recommended Solder Profiles for Power Products
09/2022
Application Notes
PRD-05641: Designing with Silicon Carbide in Energy Storage Applications
02/2022
Test Report
PRD-02344: SiC MOSFET Short-Circuit Protection Using Skyworks™ Si828x Gate Driver
03/2022
White Papers
Gen 4 Silicon Carbide Technology: Redefining Performance and Durability in High-Power Applications
New
01/2025
White Papers
Driving Industrial E-Mobility With Silicon Carbide Semiconductors
11/2024
Product Catalog
Power Product Line Card
01/2025
Sales Terms
Wolfspeed, Inc. Sales Terms and Conditions
04/2025
Sales Terms
Power Product Packing & Shipping Reference Guide
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs.
03/2025

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