650 V, 60 mΩ, 37 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET
Wolfspeed extends its Silicon Carbide (SiC) technology leadership with the introduction of 3rd-Generation 650 V MOSFETs, enabling smaller, lighter, and highly-efficient power conversion in an even wider range of power systems. The 650 V MOSFET product family is ideal for applications including high performance industrial power supplies, server/telecom power, electric vehicle charging systems, energy storage systems, uninterruptible power supplies, and battery management systems.
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Data center cooling systems account for 20-45% of power consumed by data centers. The efficiency of these cooling systems can be improved with silicon carbide leading to up to 50% reduction in system losses.
Use the SpeedFit™ Design Simulator to simulate a solar MPPT Boost Converter and see how you can achieve high efficiency and power density in solar systems even under elevated temperatures.
Using Wolfspeed silicon carbide 650 V and 1200 V MOSFETs and Schottky diodes in residential, commercial, and industrial solar inverters and MPPT boosts enables up to 70% reduction in overall system losses while significantly reducing system size, weight and cost.