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碳化硅模塊

本頁之後的所有內容均為英文。

Wolfspeed 的標準電源模塊,採用最新的碳化硅芯片組、最小化的封裝寄生效應,提高了產品性能。這些模塊使用人們熟知的工業標準,有完整的設計文檔和 門極驅動板。 Wolfspeed 不僅提供標準的模塊,還是電力系統設計人員的碳化硅模塊技術合作夥伴。隨著工程師們越來越多地設計出以碳化硅為中心的系統,Wolfspeed 支持这些工作,建立可轻松更 改的定制化解决方案,以满足顾客需求。

SpeedFit 設計模擬器不要忘記下載我們的二極管模型。
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CAB400M12XM3
XM3
Half-Bridge
1200 V
400 A
4 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
Yes
XM3
Half-Bridge
1200 V
425 A
3.2 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
Yes
XM3
Half-Bridge
1200 V
450 A
2.6 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
Yes
EAB450M12XM3
New
XM3
Half-Bridge
1200 V
450 A
2.6 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
Yes
HM High Performance 62 mm
Half-Bridge
1700 V
380 A
3.3 mΩ
Gen 3 MOS + Diodes
175 °C
110 mm x 65 mm x 12.2 mm
Yes
HM High Performance 62 mm
Half-Bridge
1200 V
480 A
2.29 mΩ
Gen 3 MOS + Diodes
175 °C
110 mm x 65 mm x 12.2 mm
Yes
HM High Performance 62 mm
Half-Bridge
1700 V
500 A
2.5 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
Yes
HM High Performance 62 mm
Half-Bridge Rectifier
1700 V
600 A
Gen 6
175 °C
110 mm x 65 mm x 12.2 mm
Yes
HM High Performance 62 mm
Half-Bridge Rectifier
1200 V
600 A
Gen 6
175 °C
110 mm x 65 mm x 12.2 mm
Yes
HM High Performance 62 mm
Half-Bridge
1700 V
650 A
1.67 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
Yes
HM High Performance 62 mm
Half-Bridge
1200 V
760 A
1.33 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
Yes
HM High Performance 62 mm
Half-Bridge Right GK for Paralleling
1200 V
760 A
1.33 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
Yes
GM3
Half-Bridge
1200 V
146 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
Yes
GM3
Half Bridge (AlN substrate)
1200 V
194 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
Yes
GM3
Half Bridge (AlN substrate)
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
Yes
GM3
Half-Bridge
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
Yes
FM3
Six-pack (three-phase)
1200 V
40 A
32 mΩ
Gen 3 MOS
150 °C
Yes
FM3
Six-pack (three-phase)
1200 V
51 A
21 mΩ
Gen 3 MOS
150 °C
Yes
FM3
Half-Bridge
1200 V
78 A
16 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
Yes
FM3
Half-Bridge
1200 V
105 A
11 mΩ
Gen 3 MOS
150 °C
Yes
62mm
Half-Bridge
1200 V
120 A
13 mΩ
Gen 2 MOS + Diodes
150 °C
106 x 62 x 30 mm
Yes
62mm
Half-Bridge
1700 V
225 A
8 mΩ
Gen 2 MOS + Diodes
150 °C
106 x 62 x 30 mm
Yes
62mm
Half-Bridge
1200 V
300 A
4.2 mΩ
Gen 2 MOS + Diodes
150 °C
106 x 62 x 30 mm
Yes
62mm
Half-Bridge
1200 V
300 A
4 mΩ
Gen 3 MOS
175 °C
105 x 62 x 31 mm
Yes
62mm
Half-Bridge
1200 V
400 A
3.25 mΩ
Gen 3 MOS
175 °C
105 x 62 x 31 mm
Yes
62mm
Half-Bridge
1200 V
530 A
2.6 mΩ
Gen 3 MOS
175 °C
106 x 62 x 30 mm
Yes
45mm
Six-pack (three-phase)
1200 V
20 A
80 mΩ
Gen 2 MOS + Diodes
150 °C
108 x 45 x 21 mm
No
45mm
Six-pack (three-phase)
1200 V
50 A
25 mΩ
Gen 2 MOS + Diodes
150 °C
108 x 45 mm
No
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Meet the Latest Energy-Efficiency Standards with Wolfspeed Silicon Carbide

This article highlights the direct impact of new global efficiency standards and the undisputed need for Silicon Carbide as the enabling semiconductor technology that has the capacity to meet these standards for high efficiency and reliability. Wolfspeed not only helps designers meet the latest standards but plan for upcoming requirements in their development roadmaps across key applications, including motors, switch-mode power supplies and EV charging infrastructures.
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