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For decades, Wolfspeed has enabled RF technology advancements that are the backbone of wireless communication and radar systems across commercial and military aviation, air traffic control, weather services, aircraft-to-satellite communications, space exploration and more. Wolfspeed innovations, including breakthrough GaN on SiC research & development, fully integrated design support, and custom assembly, all help Wolfspeed to continually provide solutions that offer significant advantages in size, weight, and power for our customers. We offer an extensive portfolio of GaN on SiC (packaged & bare die) and LDMOS devices as your complete RF system design partner.
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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA0530002S-AMP1
Yes
GaN on SiC
0.5 GHz
3 GHz
2 W
18 dB
52%
28 V
Packaged MMIC
Surface Mount
Yes
GaN on SiC
0.5 GHz
3 GHz
2 W
18 dB
52%
28 V
Packaged MMIC
Surface Mount
Yes
GaN on SiC
DC
6 GHz
2 W
17 dB
23%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
2 W
17 dB
23%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
DC
6 GHz
2 W
17 dB
30%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
DC
6 GHz
2 W
18 dB
25%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
2 W
18 dB
25%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
0.5 GHz
2.4 GHz
5 W
20 dB
47%
50 V
Packaged MMIC
Flange
Yes
GaN on SiC
0.5 GHz
2.7 GHz
5 W
20 dB
47%
50 V
Evaluation Board
Flange
Yes
GaN on SiC
8.5 GHz
9.6 GHz
6 W
>7 dB
52%
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
5.85 GHz
7.2 GHz
6 W
>7 dB
52%
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
DC
15 GHz
6 W
>7 dB
52%
40 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
DC
6 GHz
6 W
>11 dB
65%
28 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
2 GHz
6 GHz
6 W
>11 dB
65%
28 V
Evaluation Board
Pill
Yes
GaN on SiC
DC
6 GHz
6 W
>11 dB
65%
28 V
Packaged Discrete Transistor
Plastic
Yes
GaN on SiC
DC
6 GHz
6 W
>11 dB
65%
28 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
DC
18 GHz
6 W
17 dB
60%
40 V
Discrete Bare Die
Die
Yes
GaN on SiC
DC
6 GHz
8 W
>12 dB
65%
28 V
Discrete Bare Die
Die
CMPA0560008S
New
Yes
GaN on SiC
0.45 GHz
6 GHz
10 W
19 dB
40%
28 V
Packaged MMIC
Surface Mount
Yes
GaN on SiC
3.5 GHz
3.9 GHz
10 W
>16 dB
65%
28 V
Evaluation Board
Flange
No
GaN on SiC
3.5 GHz
3.9 GHz
10 W
>14 dB
65%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
10 W
>16 dB
65%
28 V
Packaged Discrete Transistor
Flange
No
GaN on SiC
DC
6 GHz
10 W
>14 dB
65%
28 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
DC
6 GHz
10 W
>16 dB
65%
28 V
Packaged Discrete Transistor
Pill
No
GaN on SiC
DC
6 GHz
10 W
>14 dB
65%
28 V
Packaged Discrete Transistor
Pill
Page 1 of 11
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Knowledge Center

RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
Continue Reading 
 Technical Articles

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
Continue Reading 
 Technical Articles

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