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For decades, Wolfspeed has enabled RF technology advancements that are the backbone of wireless communication and radar systems across commercial and military aviation, air traffic control, weather services, aircraft-to-satellite communications, space exploration and more. Wolfspeed innovations, including breakthrough GaN on SiC research & development, fully integrated design support, and custom assembly, all help Wolfspeed to continually provide solutions that offer significant advantages in size, weight, and power for our customers. We offer an extensive portfolio of GaN on SiC (packaged & bare die) and LDMOS devices as your complete RF system design partner.
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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA801B030D1
Yes
GaN on SiC
8 GHz
11 GHz
28 dB
42%
28 V
MMIC Bare Die
Yes
GaN on SiC
5.2 GHz
5.9 GHz
34 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
0.5 GHz
3 GHz
2 W
52%
28 V
Packaged MMIC
Surface Mount
Yes
GaN on SiC
DC
6 GHz
2 W
18 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
2 W
18 dB
25%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
DC
6 GHz
2 W
17 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
2 W
17 dB
23%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
DC
6 GHz
2 W
17 dB
30%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
0.5 GHz
2.4 GHz
5 W
20 dB
47%
50 V
Packaged MMIC
Flange
Yes
GaN on SiC
0.5 GHz
2.7 GHz
5 W
20 dB
NA
50 V
Evaluation Board
Flange
Yes
GaN on SiC
8.5 GHz
9.6 GHz
6 W
>7 dB
NA
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
5.85 GHz
7.2 GHz
6 W
>7 dB
NA
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
DC
15 GHz
6 W
>7 dB
52%
40 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
DC
6 GHz
6 W
>11 dB
NA
28 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
2 GHz
6 GHz
6 W
>11 dB
NA
28 V
Evaluation Board
Pill
Yes
GaN on SiC
DC
6 GHz
6 W
>11 dB
65%
28 V
Packaged Discrete Transistor
Plastic
Yes
GaN on SiC
DC
6 GHz
6 W
>11 dB
65%
28 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
DC
18 GHz
6 W
17 dB
60%
40 V
Discrete Bare Die
Die
Yes
GaN on SiC
DC
6 GHz
8 W
>12 dB
65%
28 V
Discrete Bare Die
Die
Yes
GaN on SiC
3.5 GHz
3.9 GHz
10 W
>16 dB
NA
28 V
Evaluation Board
Flange
No
GaN on SiC
3.5 GHz
3.9 GHz
10 W
>14 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
10 W
>16 dB
65%
28 V
Packaged Discrete Transistor
Flange
No
GaN on SiC
DC
6 GHz
10 W
>14 dB
65%
28 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
DC
6 GHz
10 W
>16 dB
65%
28 V
Packaged Discrete Transistor
Pill
No
GaN on SiC
DC
6 GHz
10 W
>14 dB
65%
28 V
Packaged Discrete Transistor
Pill
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
Yes
GaN on SiC
8 GHz
11 GHz
28 dB
42%
28 V
MMIC Bare Die
Yes
GaN on SiC
5.2 GHz
5.9 GHz
34 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
0.5 GHz
3 GHz
2 W
52%
28 V
Packaged MMIC
Surface Mount
Yes
GaN on SiC
DC
6 GHz
2 W
18 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
2 W
18 dB
25%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
DC
6 GHz
2 W
17 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
2 W
17 dB
23%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
DC
6 GHz
2 W
17 dB
30%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
0.5 GHz
2.4 GHz
5 W
20 dB
47%
50 V
Packaged MMIC
Flange
Yes
GaN on SiC
0.5 GHz
2.7 GHz
5 W
20 dB
NA
50 V
Evaluation Board
Flange
Yes
GaN on SiC
8.5 GHz
9.6 GHz
6 W
>7 dB
NA
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
5.85 GHz
7.2 GHz
6 W
>7 dB
NA
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
DC
15 GHz
6 W
>7 dB
52%
40 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
DC
6 GHz
6 W
>11 dB
NA
28 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
2 GHz
6 GHz
6 W
>11 dB
NA
28 V
Evaluation Board
Pill
Yes
GaN on SiC
DC
6 GHz
6 W
>11 dB
65%
28 V
Packaged Discrete Transistor
Plastic
Yes
GaN on SiC
DC
6 GHz
6 W
>11 dB
65%
28 V
Packaged Discrete Transistor
Pill
Yes
GaN on SiC
DC
18 GHz
6 W
17 dB
60%
40 V
Discrete Bare Die
Die
Yes
GaN on SiC
DC
6 GHz
8 W
>12 dB
65%
28 V
Discrete Bare Die
Die
Yes
GaN on SiC
3.5 GHz
3.9 GHz
10 W
>16 dB
NA
28 V
Evaluation Board
Flange
No
GaN on SiC
3.5 GHz
3.9 GHz
10 W
>14 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
6 GHz
10 W
>16 dB
65%
28 V
Packaged Discrete Transistor
Flange
No
GaN on SiC
DC
6 GHz
10 W
>14 dB
65%
28 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
DC
6 GHz
10 W
>16 dB
65%
28 V
Packaged Discrete Transistor
Pill
No
GaN on SiC
DC
6 GHz
10 W
>14 dB
65%
28 V
Packaged Discrete Transistor
Pill
Page 1 of 11
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Recommendations for Improving Pulse Fidelity in RF Power Amplifiers

Join Scott Blum, RF Applications Engineer with Wolfspeed as he discusses how to design areas of a pulsed amplifier circuit to achieve a high degree of pulse fidelity. Also, what parts of the amplifier circuit help or hurt the pulse fidelity and how the parts of the amplifier circuit are best designed.
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