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CG2H40010

CG2H40010

cg2h40010p_f_1
10-W RF Power GaN HEMT
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Wolfspeed’s CG2H40010 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CG2H40010; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CG2H40010 ideal for linear and compressed amplifier circuits. The transistor is available in both screw-down; flange and solder-down pill packages.

Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CG2H40010P
Yes
GaN on SiC
DC
6 GHz
10 W
>16 dB
65%
28 V
Packaged Discrete Transistor
Pill
CG2H40010F
Yes
GaN on SiC
DC
6 GHz
10 W
>16 dB
65%
28 V
Packaged Discrete Transistor
Flange
CG2H40010F-AMP
Yes
GaN on SiC
3.5 GHz
3.9 GHz
10 W
>16 dB
NA
28 V
Evaluation Board
Flange
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CG2H40010P
Yes
GaN on SiC
DC
6 GHz
10 W
>16 dB
65%
28 V
Packaged Discrete Transistor
Pill
CG2H40010F
Yes
GaN on SiC
DC
6 GHz
10 W
>16 dB
65%
28 V
Packaged Discrete Transistor
Flange
CG2H40010F-AMP
Yes
GaN on SiC
3.5 GHz
3.9 GHz
10 W
>16 dB
NA
28 V
Evaluation Board
Flange
Features
  • Up to 8 GHz Operation
  • 18 dB Small Signal Gain at 2.0 GHz
  • 16 dB Small Signal Gain at 4.0 GHz
  • 17 W typical PSAT
  • 70% Efficiency at PSAT
  • 28 V Operation
Applications
  • 2-Way Private Radio
  • Broadband Amplifiers
  • Cellular Infrastructure
  • Test Instrumentation
  • Class A; AB; Linear amplifiers suitable for OFDM; W-CDMA; EDGE; CDMA waveforms
Apply Filters
Document Type
Document Name
Version
Application Notes
Version: a
Application Notes
Version: 1.0
Application Notes
Version: a
Application Notes
Version: c
Application Notes
Version: a
Application Notes
Version: 0
Application Notes
Version: 0
Data Sheets
Version: 1.4
Design Files
Version: 1.0
Design Files
Version: 1.0
S-parameters
Version: 1.0
S-parameters
Version: 1.0
S-parameters
Version: 1.0
Technical Papers & Articles
by Woo Lee – Sang-Ho Kam – and Yoon-Ha Jeong – This paper describes a new three-stage Doherty power amplifier (DPA) with an adaptive driving amplifier inserted at the input of the carrier cell.
Version: Design
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Version: Design
Technical Papers & Articles
by Bumjin Kim – D. Derickson – and C. Sun – A class B and a class F power amplifier are described using a GaN HEMT device.
Version: design
Technical Papers & Articles
by Philip A. Godoy – SungWon Chung – Taylor W. Barton – David J. Perreault – and Joel L. Dawson – A 1.95-GHz asymmetric multilevel outphasing (AMO) transmitter with class-E GaN power amplifiers (PAs) and discrete supply modulators is presented.
Version: design
Technical Papers & Articles
by Junghwan Son – Ildu Kim – Junghwan Moon – Juyeon Lee – Bummam Kim – An asymmetric Doherty Power Amplifier (ADPA) is introduced using a new output combining circuit for easy of implementation with a large matching tolerance. The proposed APDA has been implemented using GaN HEMT devices at 2.6 GHz for WiMAX signal with 5MHz bandwidth and 8.3 dB peak to average power ratio.
Version: Design
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Version: Design
Technical Papers & Articles
by Raymond S. Pengelly – Brad Millon – Donald Farrell – Bill Pribble – and Simon Wood

Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA DesignThis presentation discusses attributes of GaN HEMTs – Cree GaN HEMT models – design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier) – and future model improvements.
Version: Design
Technical Papers & Articles
by Michael Boers – Michael Boers – Ph.D. Student – Wins IEEE MTT-S Power Amplifier Competition – 85% PAE Achieved with Microwave Office and Cree – Inc. GaN HEMT.
Version: article
Technical Papers & Articles
by Troels S. Nielsen – Ulrik R. Madsen – Michael Dieudonné – A complete power amplifier design using new Nonlinear Vector Network Analyzer (NVNA) and X-parameter technologies. A high-power – pulsed Continuous Wave (CW) NVNA setup is presented and harmonic tuning capabilities of the measured X-parameter model is demonstrated using the same setup.
Version: Design
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Cree – Inc. – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Version: Design
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman KimDemonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Version: Design
Product Ecology
CG2H40010F – CGH27015F – CGH27030F – CGH35015F – CGH35030F – CGH40010F – CGH40025F – CGH55015F1 – CGH55015F2 – CGH55030F1 – CGH55030F2 – CGHV40030F
Version: 1.0
Product Ecology
CG2H40010F – CG2H40025F – CGH27015F – CGH27030F – CGH35015F – CGH35030F – CGH40010F – CGH40025F – CGH55015F1 – CGH55015F2 – CGH55030F1 – CGH55030F2 – CGHV40030F
Version: 1.0
Product Ecology
CG2H40010P – CG2H40025P – CGH27015P – CGH27030P – CGH35015P – CGH40010P – CGH40025P – CGH55015P1 – CGH55015P2 – CGH55030P1 – CGH55030P2 – CGHV40030P
Version: 1.0
Product Catalog
Version: 1.0
Sales Terms
Version: M
by Thomas M. Hone; Souheil Bensmida; Kevin A. Morris; Mark A. Beach; Joe P. McGeehan; Jonathan Lees; Johannes Benedikt; Paul J. Tasker – Mathematical analysis of Doherty amplifiers have assumed many simplifications. Most notably – the peaking amplifier does not contribute power into the load and the peaking stage has an observed impedance of infinity. This paper will show that these simplifications impair the performance of a single-input Doherty amplifier and that phase tuning for compensation is needed to improve the overall system performance.
Version: design
Document Type
Document Name
Version
Application Notes
Version: a
Application Notes
Version: 1.0
Application Notes
Version: a
Application Notes
Version: c
Application Notes
Version: a
Application Notes
Version: 0
Application Notes
Version: 0
Data Sheets
Version: 1.4
Design Files
Version: 1.0
Design Files
Version: 1.0
S-parameters
Version: 1.0
S-parameters
Version: 1.0
S-parameters
Version: 1.0
Technical Papers & Articles
by Woo Lee – Sang-Ho Kam – and Yoon-Ha Jeong – This paper describes a new three-stage Doherty power amplifier (DPA) with an adaptive driving amplifier inserted at the input of the carrier cell.
Version: Design
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Version: Design
Technical Papers & Articles
by Bumjin Kim – D. Derickson – and C. Sun – A class B and a class F power amplifier are described using a GaN HEMT device.
Version: design
Technical Papers & Articles
by Philip A. Godoy – SungWon Chung – Taylor W. Barton – David J. Perreault – and Joel L. Dawson – A 1.95-GHz asymmetric multilevel outphasing (AMO) transmitter with class-E GaN power amplifiers (PAs) and discrete supply modulators is presented.
Version: design
Technical Papers & Articles
by Junghwan Son – Ildu Kim – Junghwan Moon – Juyeon Lee – Bummam Kim – An asymmetric Doherty Power Amplifier (ADPA) is introduced using a new output combining circuit for easy of implementation with a large matching tolerance. The proposed APDA has been implemented using GaN HEMT devices at 2.6 GHz for WiMAX signal with 5MHz bandwidth and 8.3 dB peak to average power ratio.
Version: Design
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Version: Design
Technical Papers & Articles
by Raymond S. Pengelly – Brad Millon – Donald Farrell – Bill Pribble – and Simon Wood

Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA DesignThis presentation discusses attributes of GaN HEMTs – Cree GaN HEMT models – design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier) – and future model improvements.
Version: Design
Technical Papers & Articles
by Michael Boers – Michael Boers – Ph.D. Student – Wins IEEE MTT-S Power Amplifier Competition – 85% PAE Achieved with Microwave Office and Cree – Inc. GaN HEMT.
Version: article
Technical Papers & Articles
by Troels S. Nielsen – Ulrik R. Madsen – Michael Dieudonné – A complete power amplifier design using new Nonlinear Vector Network Analyzer (NVNA) and X-parameter technologies. A high-power – pulsed Continuous Wave (CW) NVNA setup is presented and harmonic tuning capabilities of the measured X-parameter model is demonstrated using the same setup.
Version: Design
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Cree – Inc. – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Version: Design
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman KimDemonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Version: Design
Product Ecology
CG2H40010F – CGH27015F – CGH27030F – CGH35015F – CGH35030F – CGH40010F – CGH40025F – CGH55015F1 – CGH55015F2 – CGH55030F1 – CGH55030F2 – CGHV40030F
Version: 1.0
Product Ecology
CG2H40010F – CG2H40025F – CGH27015F – CGH27030F – CGH35015F – CGH35030F – CGH40010F – CGH40025F – CGH55015F1 – CGH55015F2 – CGH55030F1 – CGH55030F2 – CGHV40030F
Version: 1.0
Product Ecology
CG2H40010P – CG2H40025P – CGH27015P – CGH27030P – CGH35015P – CGH40010P – CGH40025P – CGH55015P1 – CGH55015P2 – CGH55030P1 – CGH55030P2 – CGHV40030P
Version: 1.0
Product Catalog
Version: 1.0
Sales Terms
Version: M
by Thomas M. Hone; Souheil Bensmida; Kevin A. Morris; Mark A. Beach; Joe P. McGeehan; Jonathan Lees; Johannes Benedikt; Paul J. Tasker – Mathematical analysis of Doherty amplifiers have assumed many simplifications. Most notably – the peaking amplifier does not contribute power into the load and the peaking stage has an observed impedance of infinity. This paper will show that these simplifications impair the performance of a single-input Doherty amplifier and that phase tuning for compensation is needed to improve the overall system performance.
Version: design
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