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CGH35060F1/P1

CGH35060F1/P1

Wolfspeed CGH35060F1/P1 60W 3300–3900MHz 28V GaN HEMT
60-W; 3300 – 3600-MHz; 28-V; GaN HEMT for WiMAX
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Wolfspeed’s CGH35060F1/P1 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH35060F1/P1 ideal for 3.3 – 3.6-GHz WiMAX and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package.

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Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGH35060F1
Yes
GaN on SiC
3.3 GHz
3.6 GHz
60 W
12 dB
25%
28 V
Packaged Discrete Transistor
Flange
CGH35060P1
Yes
GaN on SiC
3.3 GHz
3.6 GHz
60 W
12 dB
25%
28 V
Packaged Discrete Transistor
Pill
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGH35060F1
Yes
GaN on SiC
3.3 GHz
3.6 GHz
60 W
12 dB
25%
28 V
Packaged Discrete Transistor
Flange
CGH35060P1
Yes
GaN on SiC
3.3 GHz
3.6 GHz
60 W
12 dB
25%
28 V
Packaged Discrete Transistor
Pill
Features
  • 3.3 – 3.6 GHz Operation
  • 60 W Peak Power Capability
  • 12 dB Small Signal Gain
  • 8.0 W PAVE at < 2.0% EVM
  • 25% Drain Efficiency at 8 W PAVE
Applications
  • WiMAX Fixed Access 802.16-2004 OFDM
  • WiMAX Mobile Access 802.16e OFDMA
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Document Type
Document Name
Application Notes
Application Notes
Application Notes
Application Notes
Data Sheets
S-parameters
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by L. Cabria – P. M. Cabral – J. C. Pedro – and J. A. Garcí­a – This paper describes the design of a class E PA destined to be used as the final stage of a polar transmitter under IEEE 802.16e Mobile WiMAX signal excitation. Based on a 60 W GaN HEMT device – the load condition for optimum efficiency is set close to the maximum value of the power generating function for an OFDMA modulating signal.
Technical Papers & Articles
by Junghwan Moon – Young Yun Woo – Bummam Kim
A novel design of the Doherty power amplifier (PA) to improve the efficiency at a back-off output power level.
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Raymond S. Pengelly – Brad Millon – Donald Farrell – Bill Pribble – and Simon Wood
Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA DesignThis presentation discusses attributes of GaN HEMTs – Wolfspeed GaN HEMT models – design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier) – and future model improvements.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Product Catalog
Sales Terms
Document Type
Document Name
Application Notes
Application Notes
Application Notes
Application Notes
Data Sheets
S-parameters
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by L. Cabria – P. M. Cabral – J. C. Pedro – and J. A. Garcí­a – This paper describes the design of a class E PA destined to be used as the final stage of a polar transmitter under IEEE 802.16e Mobile WiMAX signal excitation. Based on a 60 W GaN HEMT device – the load condition for optimum efficiency is set close to the maximum value of the power generating function for an OFDMA modulating signal.
Technical Papers & Articles
by Junghwan Moon – Young Yun Woo – Bummam Kim
A novel design of the Doherty power amplifier (PA) to improve the efficiency at a back-off output power level.
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Raymond S. Pengelly – Brad Millon – Donald Farrell – Bill Pribble – and Simon Wood
Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA DesignThis presentation discusses attributes of GaN HEMTs – Wolfspeed GaN HEMT models – design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier) – and future model improvements.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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