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Wolfspeed CGH40035F RF flange package
35-W RF Power GaN HEMT
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Note: CGH40035F is Not Recommended for New Designs. Refer to CCG2H40035F Wolfspeed’s CGH40035F is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40035F; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CGH40035F ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down flange package.



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Data Sheet
Recommended For New Design?
Frequency Min
Frequency Max
Peak Output Power
Operating Voltage
Package Type
GaN on SiC
3.3 GHz
3.7 GHz
35 W
>13 dB
28 V
Evaluation Board
GaN on SiC
6 GHz
35 W
>13 dB
28 V
Packaged Discrete Transistor
  • Up to 4 GHz Operation
  • 15 dB Small Signal Gain at 2.0 GHz
  • 13 dB Small Signal Gain at 4.0 GHz
  • 45 W typical PSAT
  • 60 % Efficiency at PSAT
  • 28 V Operation
  • 2-Way Private Radio
  • Broadband Amplifiers
  • Cellular Infrastructure
  • Test Instrumentation
  • Class A; AB; Linear amplifiers suitable for OFDM; W-CDMA; EDGE; CDMA waveforms

Documents, Tools & Support


Document Type
Document Name
Application Notes
Application Notes
Application Notes
Application Notes
Design Files
Data Sheets
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Woo Lee – Sang-Ho Kam – and Yoon-Ha Jeong – This paper describes a new three-stage Doherty power amplifier (DPA) with an adaptive driving amplifier inserted at the input of the carrier cell.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Technical Papers & Articles
by Khaled Bathic; Georg Boeck
This paper presents the design of a wideband harmonically-tuned Doherty amplifier. The frequency-dependent back-off efficiency degradation was minimized by compensating the effect of the frequency-sensitive impedance inverters over the design band. Suitable choice of device size ratio as well as harmonic load tuning at back-off and maximum power operations were also considered – resulting in superior performance over the targeted design band.
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

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Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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