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CGH55015F2/P2

CGH55015F2/P2

10 W; C-band; Unmatched; GaN HEMT
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Note: CGH55015P2 is Not Recommended for New Designs. Refer to CCG2H40010P

Wolfspeed’s CGH55015F2/CGH55015P2 is a gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency; high gain and wide bandwidth capabilities; which makes the CGH55015F2/ CGH55015P2 ideal for C-band pulsed or CW saturated amplifiers. The transistor is available in both screw-down; flange and solder-down; pill packages. Based on appropriate external match adjustment; the CGH55015F2/CGH55015P2 is suitable for applications up to 6 GHz.

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Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGH55015F2
Yes
GaN on SiC
DC
6 GHz
10 W
12 dB
60%
28 V
Packaged Discrete Transistor
Flange
CGH55015P2
No
GaN on SiC
DC
6 GHz
10 W
12 dB
60%
28 V
Packaged Discrete Transistor
Pill
CGH55015F2-AMP
Yes
GaN on SiC
5.4 GHz
5.9 GHz
10 W
12 dB
NA
28 V
Evaluation Board
Flange
Features
  • 4.5 to 6.0 GHz Operation
  • 12 dB Small Signal Gain at 5.65 GHz
  • 13 W typical PSAT
  • 60% Efficiency at PSAT
  • 28 V Operation
Applications
  • 2-Way Private Radio
  • Broadband Amplifiers
  • Cellular Infrastructure
  • Test Instrumentation
  • Class A; AB; amplifiers suitable for OFDM; W-CDMA; EDGE; CDMA waveforms
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Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Raymond S. Pengelly – Brad Millon – Donald Farrell – Bill Pribble – and Simon Wood
Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA DesignThis presentation discusses attributes of GaN HEMTs – Wolfspeed GaN HEMT models – design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier) – and future model improvements.
Technical Papers & Articles
by Rocco Giofrè; Paolo Colantonio; Franco Giannini; Luca Piazzon – In this letter – a new output combining network for the implementation of a Doherty Power Amplifier (DPA) is presented. The proposed topology simultaneously allows the active load modulation and the output matching – by adopting more realizable elements than the standard DPA – especially when high output power levels are required. The innovative design approach is demonstrated through a practical prototype realization based on GaN-HEMT devices. Experimental results have shown a 65%–48% efficiency at about 42–36 dBm output power with a gain compression lower than 1.5 dB from 1.95 to 2.25 GHz.
Technical Papers & Articles
by S. Bensmida – K. Morris – J. Lees – P. Wright – J. Benedikt – P. J. Tasker – M. Beach – J. McGeehan – A new and simple Power Amplifier (PA) linearization method is proposed and demonstrated using a very high efficiency yet inherently nonlinear inverse class-F PA.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by R. Marante – L. Cabria – P. Cabral – J. C. Pedro – and J. A. García – In this paper – the impact of self heating on the linearity of a drain modulated GaN HEMT power amplifier (PA) is studied.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Technical Papers & Articles
by Ahmed Sayed and Georg Boeck – This paper describes a two-stage 5-W broad-band amplifier covering the frequency range from 10 MHz to 2.4 GHz. The design procedure is given in detail – and the results are being discussed and compared with simulations.
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