Features
- FET Tuning range UHF through 1800 MHz
- 330 W Typical Output Power
- 18 dB Power Gain
- 77 % Typical Drain Efficiency
- < 0.3 dB Pulsed Amplitude Droop
- Internally pre-matched on input; unmatched output
CGHV14250
250-W; DC – 1600-MHz; GaN HEMT for L-Band Radar Systems
Wolfspeed’s CGHV14250 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV14250 ideal for 1.2 – 1.4-GHz L-Band radar-amplifier applications. The transistor could be utilized for band-specific applications ranging from UHF through 1600 MHz. The package options are ceramic/metal flange and pill package.
Products
CGHV14250
No filters selected, showing all 3 products
CGHV14250
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CGHV14250F-AMP | Yes | GaN on SiC | DC | 1.6 GHz | 250 W | 18 dB | 77% | 50 V | Evaluation Board | Flange | ||||
CGHV14250P | Yes | GaN on SiC | DC | 1.6 GHz | 250 W | 18 dB | 77% | 50 V | Packaged Discrete Transistor | Pill | ||||
CGHV14250F | Yes | GaN on SiC | DC | 1.6 GHz | 250 W | 18 dB | 77% | 50 V | Packaged Discrete Transistor | Flange |
Applications
- L-Band Radar Amplifiers
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Apply Filters
Document Type | Document Name |
|---|---|
| Design Files | |
| Application Notes | |
| Data Sheets | |
| Technical Papers & Articles | by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
|
| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
|
| Product Catalog | |
| Sales Terms |
Knowledge Center
Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
SiC vs GaN vs Si: Find The Right Fit For Your Application
Explore Wolfspeed Silicon Carbide Power and GaN on Silicon Carbide RF solutions to enable your high performance systems.