Features
- Rated Power = 120 W @ TCASE = 85°C
- Operating Frequency = 2.9 – 3.8 GHz
- Transient 100 μsec – 300 μsec @ 20% Duty Cycle
- 13 dB Power Gain @ TCASE = 85°C
- 62% Typical Drain Efficiency @ TCASE = 85°C
- Input Matched
- <0.3 dB Pulsed Amplitude Droop
CGHV35120F
120-W; 2.9 - 3.8 GHz; 50 V; GaN HEMT for S-Band Radar Systems
Wolfspeed’s CGHV35120F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency; high gain; and wide bandwidth capabilities; which makes CGHV35120F ideal for 2.9 – 3.8 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Products
CGHV35120F
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Applications
- S-Band Radar Amplifiers
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name |
|---|---|
| Application Notes | |
| Design Files | |
| Data Sheets | |
| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Technical Papers & Articles | by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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| Product Catalog | |
| Sales Terms |
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