Features
- 2.9 – 3.5 GHz Operation
- 500 W Typical Output Power
- 11 dB Power Gain
- 70% Typical Drain Efficiency
- 50 Ohm Internally Matched
- <0.3 dB Pulsed Amplitude Droop
CGHV35400
400-W; 2900 – 3500-MHz; 50-Ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems
The CGHV35400F1 is a gallium-nitride (GaN) fully matched IMFET housed in a thermally enhanced air cavity package. Operating at 50V, the device is capable of 500W of pulsed output power, with 2mS pulse lengths at 20% duty cycle.
Products
CGHV35400
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CGHV35400
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CGHV35400F-AMP | Yes | GaN on SiC | 2.9 GHz | 3.5 GHz | 400 W | 11 dB | 60% | 50 V | Evaluation Board | Flange | ||||
CGHV35400F | Yes | GaN on SiC | 2.9 GHz | 3.5 GHz | 400 W | 11 dB | 60% | 50 V | Packaged Discrete Transistor | Flange | ||||
CGHV35400F1 | Yes | GaN on SiC | 2.9 GHz | 3.5 GHz | 500 W | 12 dB | 60% | 50 V | Packaged Discrete Transistor | Flange |
Applications
- S-Band Radar amplifiers
Documents, Tools & Support
- Technical & Sales Documents
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Documents
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Document Type | Document Name |
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| Design Files | |
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| Application Notes | |
| Data Sheets | |
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| S-parameters | |
| Technical Papers & Articles | by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Product Catalog | |
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Knowledge Center
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