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CGHV37400F

CGHV37400F

cghv37400f
400-W; 3300 – 3700-MHz; 50-Ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems

Wolfspeed’s CGHV37400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV37400F ideal for 3.3 – 3.7 GHz S-Band radar amplifier applications. The transistor is matched to 50-ohms on the input and 50-ohms on the output. The CGHV37400 is based on Wolfspeed’s high power density 50 V; 0.4 µm GaN on silicon carbide (SiC) foundry process. The transistor is supplied in a ceramic/metal flange package.

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Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV37400F
Yes
GaN on SiC
3.3 GHz
3.7 GHz
550 W
14 dB
55%
48 V
Packaged Discrete Transistor
Flange
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV37400F
Yes
GaN on SiC
3.3 GHz
3.7 GHz
550 W
14 dB
55%
48 V
Packaged Discrete Transistor
Flange
Features
  • 3.3 – 3.8 GHz Operation
  • 525 W Typical Output Power
  • 11.5 dB Power Gain
  • 55% Typical Drain Efficiency
  • 50 Ohm Internally Matched
  • <0.3 dB Pulsed Amplitude Droop
Applications
  • S-Band Radar Amplifiers
Apply Filters
Document Type
Document Name
Data Sheets
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Cree – Inc. – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Product Ecology
CGHV37400F – CGHV50200F – CGHV59350F – CGHV96050F1 – CGHV96050F2 – CGHV96100F2 – CGHV96130F
Product Ecology
CGHV37400F – CGHV50200F – CGHV59350F – CGHV96050F1 – CGHV96050F2 – CGHV96100F2,
CGHV96130F
Product Catalog
Sales Terms
Document Type
Document Name
Data Sheets
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Cree – Inc. – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Product Ecology
CGHV37400F – CGHV50200F – CGHV59350F – CGHV96050F1 – CGHV96050F2 – CGHV96100F2 – CGHV96130F
Product Ecology
CGHV37400F – CGHV50200F – CGHV59350F – CGHV96050F1 – CGHV96050F2 – CGHV96100F2,
CGHV96130F
Product Catalog
Sales Terms
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